Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract: In an electron emission method, a voltage is applied to a field electron emission element that has a boron nitride material containing crystal, formed on an element substrate to show a conical projection of the boron nitride material and shows a stable electron emitting property in an atmosphere when a voltage is applied thereto to emit electrons. An electron emission threshold of the field electron emission element falls due to formation of a surface electric dipolar layer by bringing it into contact with an operating atmosphere containing polar solvent gas when applying a voltage to the field electron emission element so as to emit electrons.

Abstract: A membrane body of sp3-bonded boron nitride has excellent field electron emission. The membrane body can withstand high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The membrane body includes a surface texture in a self-organized manner by vapor-phase deposition.

Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

Abstract: There are provided an electron emission element that operates stably in the atmosphere, a method of manufacturing the same and a method of emitting field electrons using such an element as well as an emission/display device realized by using a cold cathode electron source having a surface profile showing an excellent field electron characteristic and showing a low electron emission threshold value, a high output level and a long service life. A dilute material gas of rare gas such as argon and/or helium, hydrogen or a mixture gas thereof is used. An electron emission element substrate (4) is held to a temperature level between room temperature and 1,300° C. in an atmosphere where boron source material gas and nitride source material gas are introduced to 0.0001 to 100 volume % relative to the dilute material gas under pressure of 0.

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract: The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The solving means consists of providing a membrane body of sp3-bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300° C.; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.

Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

Abstract: A flexible tube for an automobile exhaust system which has a bellow assembly to absorb the first exhaust pipe and the second exhaust pipe for the an exhaust system having a cylindrical outer cover (5) made of plate to cover the outer periphery of the bellows (3)1 the first collar (7') and the second collar (7") with the risers (7a', 7a") bent toward the inner surface (5a) of the outer cover (5); the first elongation displacement stopper member (6') and the second elongation member displacement stopper member (6") respectively formed by bending the inner side of the outer cover (5); and the first elastic stopper member (8') and the second elastic stopper member (8") provided at the risers (7a', 7a") of both collars (7', 7"). As a further modification, the second outer cover (9) may be provided inside of the outer cover (5) to form displacement stoppers (9a, 9b) by bending the both end portions of the second outer cover.

Abstract: To connect a holding bracket to a muffler, an improved connecting structure therebetween is proposed. The muffler includes a tubular case and two end plates which are connected to axially open ends of the tubular case by means of caulking thereby to form around each axially end of the case a caulked raised portion. The bracket includes a metal rod and a metal plate. The metal plate includes an upper gripping part which grips the caulked raised portion and a lower gripping part which grips the metal rod. The metal plate has between the upper and lower gripping parts an intermediate wall portion which is put on the metal rod, so that when the muffler is properly held by the supporting bracket, entire weight of the muffler is substantially supported by the metal rod.

Abstract: In a vibration-resistant interferometer, an interference fringe image obtained by an image capturing means is analyzed and an optical path difference between a reference light component and an object light component is maintained at a predetermined value with reference to the result of this analysis, thereby making its optical system simple in structure, easy to adjust, and inexpensive to manufacture and maintain. A Fizeau-type interferometer, a CCD camera for viewing an interference fringe, a computer for analyzing the interference fringe image information obtained by the CCD camera to calculate the shape of the sample surface or the amount of vibration or inclination of the sample surface, and a PZT driving circuit for transmitting predetermined driving signals to PZTs are provided.

Abstract: A bus interface system has a bus interface, a common memory, a local bus, and a memory controller for use in a memory control. The memory controller has a buffer and is connected to the local bus. The bus interface has a burst disassembling control circuit which disassembles burst transfer data into one or a plurality of block transfers and one or a plurality of one-word transfers, which are supplied to the memory controller so that when the bus interface receives all requested data received from the common memory during a read access, the bus interface adds information on a destination device, connected to a system bus, to all the requested data and sends all the requested data with that information to the destination device via the system bus.

Abstract: Each sub-area of an object surface is measured with a partial overlapping on the peripheral edges of at least adjacent sub-areas. Surface state data of each sub-area is acquired and calculated to produce a reconstructed image. The images of the reconstructed sub-areas are made to partially overlap, and differences between the reconstructed images at selected points within the overlapped region are determined. A predetermined calculation is performed to determine coefficients, for altering the relative alignment of the reconstructed images, which minimize the differences. The reconstructed images are contiguously joined together by application of the coefficients. Thus, boundaries between the reconstructed images are joined contiguously into an accurate form.