Patents by Inventor Katuhide Niwa

Katuhide Niwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen
    Patent number: 5877095
    Abstract: A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H resptively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
    Type: Grant
    Filed: August 16, 1996
    Date of Patent: March 2, 1999
    Assignee: Nippondenso Co., Ltd.
    Inventors: Muneo Tamura, Takeshi Yamauchi, Katuhide Niwa, Takeshi Fukazawa, Akira Kuroyanagi
  • Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries
    Patent number: 5592004
    Abstract: A semiconductor device includes a semiconductor element. A silicon nitride film covers the semiconductor element. The silicon nitride film is made of Si.sub.X N.sub.Y H.sub.Z, where X, Y, and Z denote atomic fractions of Si, N, and H respectively. The silicon nitride film relates to an optical absorption edge wavelength shorter than 254 nm. A mean area of regions surrounded by crystal-like grain boundaries at a surface of the silicon nitride film is equal to 4.5.times.10.sup.4 nm.sup.2 or more. The semiconductor element may include a memory element from which information can be erased by exposure to ultraviolet rays.
    Type: Grant
    Filed: September 28, 1995
    Date of Patent: January 7, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Muneo Tamura, Takeshi Yamauchi, Katuhide Niwa, Takeshi Fukazawa, Akira Kuroyanagi, Tooru Yamaoka