Abstract: Disclosed is a method of manufacturing a semiconductor device in which an upper conductor layer and a lower conductor layer are electrically connected to each other through a contact hole provided in a multi-layer film. A lower conductor layer having a connection portion is formed on a semiconductor substrate. A first insulator film is formed on the semiconductor substrate to cover the lower conductor layer. On the first insulator film is formed a second insulator film having etching speed different from that of the first insulator film. An opening portion for exposing the connection portion is formed in the first and second insulator films. A native oxide film existing on the surface of the exposed opening portion is removed. An upper conductor layer is deposited on the second insulator film to fill the opening portion.

Abstract: Disclosed is a method of manufacturing a semiconductor device of a multi-layer film structure. A gate electrode having a connection portion is formed on a semiconductor substrate. An underlying silicon oxide film is formed on the semiconductor substrate including the gate electrode. A silicon nitride film is formed on the silicon oxide film. A first opening portion having a larger diameter than that of the connection portion is formed at a portion of the silicon nitride film above the connection portion. An overlying silicon oxide film is formed on the silicon nitride film so as to fill the first opening portion. A second opening portion for exposing the connection portion is formed in the underlying silicon oxide film and in the overlying silicon oxide film. A native oxide film existing on the surface of the exposed connection portion is removed with an aqueous solution of HF. Finally, an aluminum alloy film is deposited to fill the second opening portion and cover the overlying silicon oxide film.