Patents by Inventor Katuhiro Norisuye

Katuhiro Norisuye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having bipolar transistor and integrated injection logic
    Patent number: 4694321
    Abstract: A semiconductor integrated circuit device incorporating bipolar transistors and IILs comprises respective buried layers in a substrate and active regions. A buried layer formed in the IIL region has a larger Gummel number than that of a buried layer formed in the bipolar transistor region so that a leakage current to the substrate is prevented. A larger Gummel number of the buried layer is accomplished by increasing the impurity concentration or the thickness of the layer. The device structure allows an enhanced circuit packing density, while suppressing a leakage current to the substrate.
    Type: Grant
    Filed: July 17, 1985
    Date of Patent: September 15, 1987
    Assignees: Hitachi, Ltd., Hitachi Microcomputer Engineering, Ltd.
    Inventors: Katsuyoshi Washio, Makoto Hayashi, Tomoyuki Watanabe, Takahiro Okabe, Katuhiro Norisuye