Patents by Inventor Katunori Ueno

Katunori Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing an insulated gate field effect transistor
    Patent number: 5086007
    Abstract: Improved insulated gate field effect transistors and methods of manufacture are disclosed wherein a self aligned source region is formed in the sides of a groove or indentation in a semiconductor substrate. By eliminating photolithography steps, yield is improved and manufacturing cost is reduced while achieving fine tolerances. As a result, reduction in cell size of approximately a factor of 6 is possible and channel resistance is reduced, allowing for increased current capacity. Source regions (26) are formed by dopant outdiffusion from insulating portions (24C).
    Type: Grant
    Filed: May 8, 1990
    Date of Patent: February 4, 1992
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Katunori Ueno