Patents by Inventor Katuya Ishikawa

Katuya Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a solid-state image pickup device
    Patent number: 5466612
    Abstract: A dielectric film is formed on a P type silicon substrate. Then a specified resist pattern is formed on the dielectric film. Using this resist pattern as the mask, a phosphorus ion beam is implanted. Then, removing the resist pattern, heat treatment is given. By this heat treatment, a photo diode is formed in a depth of about 1 .mu.m. A specified resist pattern is formed again on the dielectric film. Using this resist pattern as the mask, boron ions are implanted. Thus, a channel stopper region is formed. Afterwards, removing the resist pattern, the dielectric film is removed. Again, a dielectric film is formed on the silicon substrate. Later, a stacked oxide film is formed in the other regions than the region for forming the photo diode on the dielectric film. Using the stacked oxide film as the mask, a boron ion beam is implanted.
    Type: Grant
    Filed: June 24, 1993
    Date of Patent: November 14, 1995
    Assignee: Matsushita Electronics Corp.
    Inventors: Genshu Fuse, Katuya Ishikawa