Patents by Inventor Katy Samuels

Katy Samuels has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive memory devices and arrays
    Patent number: 10096651
    Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 9, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang
  • Memristors with oxide switching layers
    Patent number: 10026894
    Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: July 17, 2018
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning Ge, Jianhua Yang, Zhiyong Li, Minxian Zhang, Katy Samuels
  • MEMRISTORS WITH OXIDE SWITCHING LAYERS
    Publication number: 20170279044
    Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.
    Type: Application
    Filed: September 30, 2014
    Publication date: September 28, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Jianhua YANG, Zhiyong LI, Minxian ZHANG, Katy Samuels
  • RESISTIVE MEMORY DEVICES AND ARRAYS
    Publication number: 20170271409
    Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
    Type: Application
    Filed: January 29, 2015
    Publication date: September 21, 2017
    Inventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang