Patents by Inventor Kaun-Lun Cheng

Kaun-Lun Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for selectively forming strained etch stop layers to improve FET charge carrier mobility
    Patent number: 7220630
    Abstract: A strained channel MOSFET device with improved charge carrier mobility and method for forming the same, the method including providing a first and second FET device having a respective first polarity and second polarity opposite the first polarity on a substrate; forming a strained layer having a stress selected from the group consisting of compressive and tensile on the first and second FET devices; and, removing a thickness portion of the strained layer over one of the first and second FET devices to improve charge carrier mobility.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: May 22, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kaun-Lun Cheng, Shui-Ming Cheng, Yu-Yuan Yao, Ka-Hing Fung, Sun-Jay Chang
  • Method for selectively forming strained etch stop layers to improve FET charge carrier mobility
    Publication number: 20050260810
    Abstract: A strained channel MOSFET device with improved charge carrier mobility and method for forming the same, the method including providing a first and second FET device having a respective first polarity and second polarity opposite the first polarity on a substrate; forming a strained layer having a stress selected from the group consisting of compressive and tensile on the first and second FET devices; and, removing a thickness portion of the strained layer over one of the first and second FET devices to improve charge carrier mobility.
    Type: Application
    Filed: May 21, 2004
    Publication date: November 24, 2005
    Inventors: Kaun-Lun Cheng, Shui-Ming Cheng, Yu-Yuan Yao, Ka-Hing Fung, Sun-Jay Chang