Patents by Inventor Kaupo Kukli

Kaupo Kukli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110198756
    Abstract: Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC?, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C? comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C? further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.
    Type: Application
    Filed: August 25, 2006
    Publication date: August 18, 2011
    Inventors: ΓΌ Thenappan, Chien-Wei Li, David Nalewajek, Martin Cheney, Jingyu Lao, Eric Eisenbraun, Min Li, Nathaniel Berliner, Mikko Ritala, Markku Leskela, kaupo Kukli, Linda Cheney
  • Patent number: 7377976
    Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
    Type: Grant
    Filed: August 22, 2005
    Date of Patent: May 27, 2008
    Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
  • Publication number: 20060068992
    Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
    Type: Application
    Filed: August 22, 2005
    Publication date: March 30, 2006
    Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
  • Patent number: 6932867
    Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: August 23, 2005
    Assignee: ASM International, N.V.
    Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
  • Publication number: 20040007171
    Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
    Type: Application
    Filed: July 10, 2003
    Publication date: January 15, 2004
    Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli
  • Patent number: 6632279
    Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: October 14, 2003
    Assignee: ASM Microchemistry, Oy
    Inventors: Mikko Ritala, Antti Rahtu, Markku Leskela, Kaupo Kukli