Patents by Inventor Kaushal Singh

Kaushal Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10430417
    Abstract: System and method for visual Bayesian data fusion are disclosed. In an example, a plurality of datasets associated with a topic are obtained from a data lake. Each of the plurality of datasets include information corresponding to various attributes of the topic. Further, the plurality of datasets are joined to obtain a joined dataset. Furthermore, distribution associated with a target attribute is predicted using Bayesian modeling by selecting a plurality of attributes (k) based on mutual information with the target attribute in the joined dataset, learning a minimum spanning tree based Bayesian structure using the selected attributes and the target attribute, learning conditional probabilistic tables at each node of the minimum spanning tree based Bayesian structure; and predicting the distribution associated with the target attribute by querying the conditional probabilistic tables, thereby facilitating visual Bayesian data fusion.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: October 1, 2019
    Assignee: Tata Consultancy Services Limited
    Inventors: Geetika Sharma, Karamjit Singh, Garima Gupta, Gautam Shroff, Puneet Agarwal, Aditeya Pandey, Kaushal Ashokbhai Paneri, Gunjan Sehgal
  • Patent number: 10417331
    Abstract: System and method for processing command line interface (CLI) commands of a CLI-based application, which include a help-like function to expose usage information of the CLI commands, use a database of CLI usage information to search for at least partial match to user query without user input to call the help-like function of CLI commands. As a result, at least one candidate CLI command from the CLI commands that corresponds to the at least partial match is selected and presented on a user interface for user selection to execute a CLI command.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: September 17, 2019
    Assignee: VMware, Inc.
    Inventors: Ashish Singh, Kaushal Gala, Srikkanth Sundararajan, Raghavendra Kolli, Lakshmi Kiran Soppadandi
  • Patent number: 10310198
    Abstract: The disclosed apparatus may include (1) a housing unit that houses an optical transducer within a telecommunications device, (2) a heatsink that is coupled to a movable shaft secured to a joint within the telecommunications device, and (3) a coil spring that (A) is coupled to the movable shaft secured to the joint within the telecommunications device and, when released, (B) applies a force that presses the heatsink against the optical transducer to ensure that the heatsink is thermally coupled to the optical transducer. Various other apparatuses, systems, and methods are also disclosed.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: June 4, 2019
    Assignee: Juniper Networks, Inc
    Inventors: Alexander I. Yatskov, Eeshitw Kaushal Singh
  • Publication number: 20070252500
    Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 1, 2007
    Inventors: Joseph Ranish, Kaushal Singh, Bruce Adams
  • Publication number: 20070252299
    Abstract: A method for synchronizing the rotation of a substrate boat with material deposition is disclosed. Whenever support rods of the substrate boat rotate past a deposition source, they will block deposition gas from reaching certain portions of the substrate. By stopping the deposition gas whenever the support rods are located between the substrate and the deposition source, a uniform deposition can be achieved.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 1, 2007
    Inventors: Maitreyee Mahajani, Joseph Yudovsky, Yi-Chiau Huang, Kaushal Singh, Veronica McCarthy
  • Publication number: 20070240632
    Abstract: Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces.
    Type: Application
    Filed: October 12, 2006
    Publication date: October 18, 2007
    Inventors: Kaushal Singh, Paul Comita, Lance Scudder, David Carlson
  • Publication number: 20070232031
    Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
    Type: Application
    Filed: May 22, 2007
    Publication date: October 4, 2007
    Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
  • Publication number: 20060286776
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 21, 2006
    Inventors: Joseph Ranish, Kaushal Singh
  • Publication number: 20060286820
    Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
    Type: Application
    Filed: June 21, 2005
    Publication date: December 21, 2006
    Inventors: Kaushal Singh, Sean Seutter, Jacob Smith, R. Iyer, Steve Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
  • Publication number: 20060286819
    Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
    Type: Application
    Filed: June 21, 2005
    Publication date: December 21, 2006
    Inventors: Sean Seutter, Kaushal Singh, Jacob Smith, R. Iyer, Steve Ghanayem, Adam Brailove, Robert Shydo, Jeannot Morin
  • Publication number: 20060286775
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 21, 2006
    Inventors: Kaushal Singh, Joseph Ranish
  • Publication number: 20060286774
    Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.
    Type: Application
    Filed: June 20, 2006
    Publication date: December 21, 2006
    Inventors: Kaushal Singh, Sean Seutter
  • Publication number: 20060258124
    Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
    Type: Application
    Filed: April 10, 2006
    Publication date: November 16, 2006
    Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
  • Publication number: 20050277272
    Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.
    Type: Application
    Filed: June 10, 2004
    Publication date: December 15, 2005
    Inventors: Kaushal Singh, David Carlson, Manish Hemkar, Satheesh Kuppurao, Randhir Thakur
  • Patent number: 6730354
    Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: May 4, 2004
    Assignees: Agilent Technologies, Inc., Applied Materials, Inc., Texas Instruments, Inc.
    Inventors: Stephen R. Gilbert, Kaushal Singh, Sanjeev Aggarwal, Stevan Hunter
  • Publication number: 20030091740
    Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.
    Type: Application
    Filed: August 8, 2001
    Publication date: May 15, 2003
    Inventors: Stephen R. Gilbert, Kaushal Singh, Sanjeev Aggarwal, Stevan Hunter
  • Patent number: 6035803
    Abstract: A process for depositing a dielectric film having a reduced dielectric constant and desirable gap-fill characteristics, at an acceptable deposition rate is disclosed. A filmed deposited according to the present invention possesses acceptable stability, and avoids outgassing of the halogen dopant while resisting shrinkage.A carbon-based dielectric film is deposited on a substrate in a processing chamber by first flowing a process gas into the processing chamber. The process gas includes a gaseous source of carbon (such as methane (CH.sub.4)) and a gaseous source of a halogen (such as a source of fluorine (e.g., C.sub.4 F.sub.8)). A plasma is then formed from the process gas by applying a first and a second RF power component. Preferably, the second RF component has a frequency of between about 200 kHz and 2 MHz and a power level of between about 5 W and 75 W. The first and a second RF power components are applied for a period of time to deposit a halogen-doped carbon-based layer.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 14, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Stuardo Robles, Wai-Fan Yau, Ping Xu, Kaushal Singh