Abstract: An apparatus for a communication device, the apparatus may include a processor configured to: obtain channel metrics for a plurality of radio communication channels, each obtained channel metric is associated with a respective radio communication channel of the plurality of radio communication channels, generate a plurality of channel hopping sequences, each channel hopping sequence is representative of an allocation of the plurality of radio communication channels for a plurality of time slots, wherein a number of time slots allocated for each radio communication channel within each channel hopping sequence is based on the respective obtained channel metric, and select one of the plurality of channel hopping sequences based on a predefined criterion to communicate with a further communication device.

Abstract: In an example, an apparatus may include a validation module configured to identify a security policy update from a security as code repository, wherein the identified security policy update is a candidate for deployment to a production environment having a plurality of attributes defined by an infrastructure as code repository; identify, from the plurality of attributes and using the infrastructure as code repository, individual attributes that correspond to the identified security policy update, wherein the identified individual attributes are identical to a subset of the plurality of attributes; generate a test environment based on the identified individual attributes; following deployment of the identified security policy update to the test environment, check for security exceptions or availability exceptions using the test environment; and output validation results based on a result of the checking.

Abstract: The present disclosure relates to systems, methods, and non-transitory computer readable media that utilize a consolidated graphical user interface for visually presenting the state of a user profile with respect to a workflow journey. For instance, in one or more embodiments, the disclosed systems provide, for display within a graphical user interface of a client device, a visual representation of a workflow journey comprising a plurality of nodes and one or more edges connecting the plurality of nodes. Additionally, the disclosed systems receive, via the graphical user interface of the client device, an identifier associated with a user profile. The disclosed systems further modify, within the graphical user interface of the client device, the visual representation of the workflow journey to reflect a state of the user profile with respect to the workflow journey.

Abstract: Systems, devices, and techniques are disclosed for network security policy management. A file including code written using a Domain Specific Language (DSL) for network security may be received. A cloud native enforcement artifact may be generated from the code written using DSL in the file. A policy domain model including hierarchical data, relational data, and graph data for a network security policy may be generated from the code written using DSL in the file and the cloud native enforcement artifact. The policy domain model may be stored in a persistent storage.

Abstract: Systems and methods for customer journey orchestration are described. One or more aspects of the systems and methods include identifying, by a customer journey orchestration application, a customer journey having a previously unidentified fault; initiating, by a mode selection component, a debug mode of the customer journey orchestration application for the customer journey; receiving, by a graphical user interface of the customer journey orchestration application, a user input corresponding to an event of a plurality of events of the customer journey; simulating, by an event simulation component, the event based on the user input and the debug mode; determining, by a status component, a status of the event based on the simulation; and identifying, by a fault identification component, the previously unidentified fault based on the status of the event.

Abstract: The present disclosure is directed to a trap filter system having a plurality of filters, the plurality of filters having filtering materials to remove contaminants from a flow of gas effluents generated by a semiconductor processing tool and a bypass mechanism configured to selectively direct or shut off the flow of gas effluents to one or more of the plurality of filters while the semiconductor processing tool remains in operation. Each of the plurality of filters is removable and replaceable when the filtering material is unable to effectuate the removal of contaminants.

Abstract: The disclosed apparatus may include (1) a housing unit that houses an optical transducer within a telecommunications device, (2) a heatsink that is coupled to a movable shaft secured to a joint within the telecommunications device, and (3) a coil spring that (A) is coupled to the movable shaft secured to the joint within the telecommunications device and, when released, (B) applies a force that presses the heatsink against the optical transducer to ensure that the heatsink is thermally coupled to the optical transducer. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.

Abstract: A method for synchronizing the rotation of a substrate boat with material deposition is disclosed. Whenever support rods of the substrate boat rotate past a deposition source, they will block deposition gas from reaching certain portions of the substrate. By stopping the deposition gas whenever the support rods are located between the substrate and the deposition source, a uniform deposition can be achieved.

Abstract: Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces.

Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes.

Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

Abstract: Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

Abstract: A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.

Abstract: Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.