Patents by Inventor Kaushik Chandra

Kaushik Chandra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices
    Patent number: 8716101
    Abstract: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: May 6, 2014
    Assignee: International Business Machines Corporation
    Inventors: Kaushik Chandra, Ronald G. Filippi, Wai-Kin Li, Ping-Chuan Wang, Chih-Chao Yang
  • STRUCTURE AND METHOD OF REDUCING ELECTROMIGRATION CRACKING AND EXTRUSION EFFECTS IN SEMICONDUCTOR DEVICES
    Publication number: 20120264295
    Abstract: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.
    Type: Application
    Filed: June 22, 2012
    Publication date: October 18, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kaushik Chandra, Ronald G. Filippi, Wai-Kin Li, Ping-Chuan Wang, Chih-Chao Yang
  • Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices
    Patent number: 8237283
    Abstract: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: August 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: Kaushik Chandra, Ronald G. Filippi, Wai-Lin Li, Ping-Chuan Wang, Chih-Chao Yang
  • STRUCTURE AND METHOD OF REDUCING ELECTROMIGRATION CRACKING AND EXTRUSION EFFECTS IN SEMICONDUCTOR DEVICES
    Publication number: 20080303164
    Abstract: A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.
    Type: Application
    Filed: June 5, 2007
    Publication date: December 11, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kaushik Chandra, Ronald G. Filippi, Wai-Kin Li, Ping-Chuan Wang, Chih-Chao Yang