Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Abstract: Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.