Patents by Inventor Kaushik Vaidya

Kaushik Vaidya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220076971
    Abstract: Embodiments disclosed herein relate to an apparatus for aligning and securing a transferable substrate support. In one embodiment, a substrate support assembly includes a transferable substrate support. The transferable substrate support includes one or more first separable contact terminals disposed on a surface of the transferable substrate support. Each of the first separable contact terminals includes a detachable connection region and an electrical connection region, and the electrical connection region is coupled to an electrical element disposed within the transferable substrate support. The detachable connection region of each of the one or more first separable contact terminals is configured to detachably connect and disconnect with a corresponding pin of one or more pins of a supporting pedestal by repositioning the supporting pedestal relative to the transferable substrate support in a first direction.
    Type: Application
    Filed: September 4, 2020
    Publication date: March 10, 2022
    Inventors: Kirankumar Neelasandra SAVANDAIAH, Nitin Bharadwaj SATYAVOLU, Kaushik VAIDYA, Bhaskar PRASAD, Srinivasa Rao YEDLA, Aju PHILIP, Thomas BREZOCZKY
  • Patent number: 10872749
    Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the exterior surface. The textured skin has a first side configured to be disposed against the exterior surface and a second side facing away from the first side. The second side has a plurality of engineered features configured to enhance adhesion of material deposited on the textured skin during use of the processing chamber.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: December 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Gangadhar Sheelavant, Cariappa Achappa Baduvamanda, Kaushik Vaidya, Bopanna Ichettira Vasantha
  • Patent number: 10253406
    Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: April 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Laksheswar Kalita, Prerna S. Goradia, Geetika Bajaj, Yogita Pareek, Yixing Lin, Dmitry Lubomirsky, Ankur Kadam, Bipin Thakur, Kevin A. Papke, Kaushik Vaidya
  • Publication number: 20180076010
    Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the exterior surface. The textured skin has a first side configured to be disposed against the exterior surface and a second side facing away from the first side. The second side has a plurality of engineered features configured to enhance adhesion of material deposited on the textured skin during use of the processing chamber.
    Type: Application
    Filed: July 26, 2017
    Publication date: March 15, 2018
    Inventors: Gangadhar SHEELAVANT, Cariappa Achappa BADUVAMANDA, Kaushik VAIDYA, Bopanna Ichettira VASANTHA
  • Publication number: 20170260618
    Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
    Type: Application
    Filed: March 7, 2017
    Publication date: September 14, 2017
    Inventors: Laksheswar KALITA, Prerna A. GORADIA, Geetika BAJAJ, Yogita PAREEK, Yixing LIN, Dmitry LUBOMIRSKY, Ankur KADAM, Bipin THAKUR, Kevin A. PAPKE, Kaushik VAIDYA
  • Publication number: 20170189965
    Abstract: Implementations described herein generally relate to additive manufacturing. More particularly, implementations disclosed herein relate to formulations and processes for forming articles via a three-dimensional printing (or 3D printing) process. In one implementation, a method of additive manufacturing is provided. The method comprises dispensing a first layer of a feed material over a platen. The feed material includes a powder mixture comprising a plurality of particulates comprising a first material and a plurality of particulates comprising a second material different from the first material. The method further comprises directing a laser beam to heat the feed material at locations specified by data stored in a computer readable medium. The laser beam heats the feed material to a temperature sufficient to fuse at least the second material.
    Type: Application
    Filed: January 5, 2017
    Publication date: July 6, 2017
    Inventors: Kaushik VAIDYA, Simon YAVELBERG, Cariappa Achappa BADUVAMANDA
  • Publication number: 20130157409
    Abstract: Embodiments of the invention generally provide methods for forming a silicon-based photovoltaic device. In one embodiment, a method includes forming a pattern inhibitor layer on a back surface of a substrate, wherein the pattern inhibitor layer covers a first portion of the back surface and a second portion of the back surface remains substantially free of the pattern inhibitor layer. The method further includes forming a passivation layer containing aluminum oxide on the second portion of the back surface and maintaining the pattern inhibitor layer substantially free of the passivation layer during a selective atomic layer deposition (S-ALD) process. Additionally, the method includes removing the pattern inhibitor layer from the back surface to reveal the first portion of the back surface and subsequently forming a contact layer on the first portion of the back surface.
    Type: Application
    Filed: December 14, 2012
    Publication date: June 20, 2013
    Inventors: Kaushik VAIDYA, Hari K. PONNEKANTI
  • Patent number: 7745029
    Abstract: Oxidation-resistant ferritic steel alloys for high temperature applications consist essentially of chromium (Cr) in an amount from about 18 to about 25 atom percent, tungsten (W) in an amount from about 0.5 to about 2 atom percent, manganese (Mn) in an amount less than about 0.8 atom percent, aluminum (Al) in an amount less than about 0.2 atom percent, silicon (Si) in an amount less than about 0.1 atom percent, and rare earth metals that includes neodymium (Nd) in an amount from about 0.002 to about 0.2 atom percent with the balance being iron (Fe). Also disclosed herein are solid oxide fuel cells that include separators formed for the oxidation resistant ferritic alloys.
    Type: Grant
    Filed: November 7, 2006
    Date of Patent: June 29, 2010
    Assignee: General Electric Company
    Inventors: Melvin Jackson, Canan Uslu Hardwicke, Hari Nadathur Seshadri, Amitabh Verma, Sheela Ramasesha, Aravind Dattatrayarao Chinchure, Kaushik Vaidya
  • Publication number: 20080107947
    Abstract: Oxidation-resistant ferritic steel alloys for high temperature applications consist essentially of chromium (Cr) in an amount from about 18 to about 25 atom percent, tungsten (W) in an amount from about 0.5 to about 2 atom percent, manganese (Mn) in an amount less than about 0.8 atom percent, aluminum (Al) in an amount less than about 0.2 atom percent, silicon (Si) in an amount less than about 0.1 atom percent, and rare earth metals that includes neodymium (Nd) in an amount from about 0.002 to about 0.2 atom percent with the balance being iron (Fe). Also disclosed herein are solid oxide fuel cells that include separators formed for the oxidation resistant ferritic alloys.
    Type: Application
    Filed: November 7, 2006
    Publication date: May 8, 2008
    Inventors: Melvin Jackson, Canan Uslu Hardwicke, Hari Nadathur Seshadri, Amitabh Verma, Sheela Ramasesha, Aravind Dattatrayarao Chinchure, Kaushik Vaidya
  • Publication number: 20070122304
    Abstract: Disclosed herein is a composition comprising iron; about 18 to about 30 wt % chromium; up to about 7 wt % tungsten; up to about 1.5 wt % manganese; up to about 1 wt % aluminum; about 0.02 to about 0.1 wt % of a rare earth metal and/or yttrium; wherein the weight percents are based on the total weight of the composition. Disclosed herein too is a method comprising melting together a composition comprising iron; about 18 to about 30 wt % chromium; up to about 7 wt % tungsten; up to about 1.5 wt % manganese; up to about 1 wt % aluminum; about 0.02 to about 0.1 wt % of a rare earth metal and/or yttrium; wherein the weight percents are based on the total weight of the composition; casting the composition; and rolling the composition.
    Type: Application
    Filed: November 28, 2005
    Publication date: May 31, 2007
    Inventors: Sheela Ramasesha, Hari N.S., Amitabh Verma, Aravind Chinchure, Kaushik Vaidya, Melvin Jackson
  • Publication number: 20070091535
    Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
    Type: Application
    Filed: November 17, 2006
    Publication date: April 26, 2007
    Inventors: Hamid Noorbakhsh, Siamak Salimian, Paul Luscher, James Carducci, Evans Lee, Kaushik Vaidya, Hongqing Shan, Michael Welch
  • Publication number: 20070087250
    Abstract: An alloy for an interconnect for a fuel cell is provided. The alloy comprises iron at least about 60 weight percent, chromium in the range of about 15 to about 30 weight percent and tungsten in the range of about 3 to about 4.5 weight percent. The alloy also includes at least one element selected from the group consisting of aluminum, yttrium, zirconium, lanthanum, manganese, molybdenum, nickel, vanadium, tantalum, and titanium.
    Type: Application
    Filed: October 13, 2005
    Publication date: April 19, 2007
    Inventors: Daniel Lewis, Melvin Jackson, Canan Hardwicke, Anthony Tohmpson, Sheela Ramasesha, Hari S., Aravind Chinchure, Kaushik Vaidya, Amitabh Verma
  • Publication number: 20050221138
    Abstract: In one aspect, a fuel cell assembly comprises a plurality of fuel cells. Each of the fuel cells includes an anode layer, a cathode layer and an electrolyte interposed therebetween. The fuel cell further comprises a conducting layer in intimate contact with at least one of the cathode layer and the anode layer. The conducting layer is configured to facilitate transport of electrons from the anode layer and the cathode layer.
    Type: Application
    Filed: April 1, 2004
    Publication date: October 6, 2005
    Inventors: Aravind Chinchure, Hari Ns, Amitabh Verma, Sheela Ramasesha, Kaushik Vaidya
  • Patent number: 6916399
    Abstract: The present invention provides a temperature controlled energy transparent window or electrode used to advantage in a substrate processing system. The invention also provides methods associated with controlling lid temperature during processing and for controlling etching processes. In a preferred embodiment the invention provides a fluid supply system for the lid which allows the fluid to flow through a feedthrough and into and out of a channel formed in the window or electrode. The fluid supply system may also mount the window or electrode to a retaining ring which secures the window or electrode to the chamber. In another aspect the invention provides a bonded window or electrode having a first and second plate having a channel formed in the plates so that when the plates are bonded together they form a channel therein through which a temperature controlling fluid can be flowed. An external control system preferably regulates the temperature of the fluid.
    Type: Grant
    Filed: June 3, 1999
    Date of Patent: July 12, 2005
    Inventors: Yan Rozenzon, Gil Lavi, Evans Y. Lee, Dong Ho Choi, Matt Hamrah, Paul E. Luscher, Kaushik Vaidya, Bryan Pu, Richard Fovell
  • Patent number: 6432259
    Abstract: A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
    Type: Grant
    Filed: December 14, 1999
    Date of Patent: August 13, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Hamid Noorbakhsh, Michael Welch, Siamak Salimian, Paul Luscher, Hongching Shan, Kaushik Vaidya, Jim Carducci, Evans Lee
  • Publication number: 20020069970
    Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
    Type: Application
    Filed: January 22, 2002
    Publication date: June 13, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Hamid Noorbakhsh, Siamak Salimian, Paul Luscher, James D. Carducci, Evans Lee, Kaushik Vaidya, Hongqing Shan, Michael D. Welch
  • Patent number: 6364957
    Abstract: A substrate support assembly 30 comprises a substrate support 38 and a collar 130 which may comprise at least one slit 150. The slit allows for thermal expansion compensation in the support assembly 30. The collar 130 may, for example, protect the dielectric 45 from erosion in a process chamber 25. In one version, the collar 130 comprises a clamping ring 200 on the dielectric 45.
    Type: Grant
    Filed: February 8, 2000
    Date of Patent: April 2, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Gerhard M. Schneider, Hamid Noorbakhsh, Bryan Pu, Kaushik Vaidya, Brad Leroy Mays, Hung Dao, Evans Lee, Hongging Shan