Patents by Inventor Kaustuve Bhattacharyya

Kaustuve Bhattacharyya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10845707
    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: November 24, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Patent number: 10831111
    Abstract: A method of measuring a target, an associated lithographic method, an associated computer program product and an associated litho cell is provided, wherein the method includes measuring the target subsequent to exposure of structures by a lithographic process in a current layer on a substrate over one or more preceding layers, wherein the one or more preceding layers have each undergone an etch step, and wherein the target is only in at least one of the one or more preceding layers. In this way, an after-etch measurement of the target can be obtained.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: November 10, 2020
    Assignee: ASML Netherlands B.V.
    Inventor: Kaustuve Bhattacharyya
  • Patent number: 10831109
    Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: November 10, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Martin Jacobus Johan Jak, Kaustuve Bhattacharyya
  • Publication number: 20200348125
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Application
    Filed: July 17, 2020
    Publication date: November 5, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
  • Patent number: 10809628
    Abstract: Metrology targets are formed by a lithographic process, each target comprising a bottom grating and a top grating. Overlay performance of the lithographic process can be measured by illuminating each target with radiation and observing asymmetry in diffracted radiation. Parameters of metrology recipe and target design are selected so as to maximize accuracy of measurement of overlay, rather than reproducibility. The method includes calculating at least one of a relative amplitude and a relative phase between (i) a first radiation component representing radiation diffracted by the top grating and (ii) a second radiation component representing radiation diffracted by the bottom grating after traveling through the top grating and intervening layers. The top grating design may be modified to bring the relative amplitude close to unity. The wavelength of illuminating radiation in the metrology recipe can be adjusted to bring the relative phase close to ?/2 or 3?/2.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: October 20, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20200301290
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Application
    Filed: June 5, 2020
    Publication date: September 24, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey DEN BOEF, Kaustuve Bhattacharyya
  • Patent number: 10718604
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: July 21, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
  • Publication number: 20200218166
    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
    Type: Application
    Filed: January 3, 2020
    Publication date: July 9, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Martin Jacobus Johan Jak
  • Patent number: 10698322
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: June 30, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Patent number: 10656533
    Abstract: An apparatus and method for estimating a parameter of a lithographic process and an apparatus and method for determining a relationship between a measure of quality of an estimate of a parameter of a lithographic process are provided. In the apparatus for estimating the parameter a processor is configured to determine a quality of the estimate of the parameter relating to the tested substrate based on a measure of feature asymmetry in the at least first features of the tested substrate and further based on a relationship determined for a plurality of corresponding at least first features of at least one further substrate representative of the tested substrate, the relationship being between a measure of quality of an estimate of the parameter relating to the at least one further substrate and a measure of feature asymmetry in the corresponding first features.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: May 19, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Simon Gijsbert Josephus Mathijssen, Martin Jacobus Johan Jak, Kaustuve Bhattacharyya
  • Publication number: 20200133144
    Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.
    Type: Application
    Filed: May 18, 2018
    Publication date: April 30, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Emil Peter SCHMITT-WEAVER, Kaustuve BHATTACHARYYA, Rene Marinus Gerardus Johan QUEENS, Wolfgang Helmut HENKE, Wim Tjibbo TEL, Theodorus Franeiscus Adrianus Maria LINSCHOTEN
  • Patent number: 10635004
    Abstract: A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Aiqin Jiang, Arie Jeffrey Den Boef, Kaustuve Bhattacharyya, Hans Van Der Laan, Bart Visser, Martin Jacobus Johan Jak
  • Publication number: 20200110342
    Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Zili ZHOU, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard MC Namara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya
  • Publication number: 20200103762
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey DEN BOEF, Kaustuve BHATTACHARYYA
  • Publication number: 20200012198
    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey DEN BOEF, Kaustuve BHATTACHARYYA
  • Patent number: 10527953
    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: January 7, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Martin Jacobus Johan Jak
  • Patent number: 10527949
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: January 7, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20200004164
    Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
    Type: Application
    Filed: January 3, 2018
    Publication date: January 2, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Emil Peter SCHMITT-WEAVER, Kaustuve BHATTACHARYYA, Wim Tjibbo TEL, Frank STAALS, Leon Martin LEVASIER
  • Patent number: 10481499
    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: November 19, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Publication number: 20190346256
    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
    Type: Application
    Filed: July 10, 2019
    Publication date: November 14, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria VAN BUEL, Christophe David FOUQUET, Hendrik Jan Hidde SMILDE, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Johannes Marcus Maria BELTMAN, Andreas FUCHS, Orner Abubaker Orner ADAM, Michael KUBIS, Martin Jacobus Johan JAK