Abstract: This disclosure provides electron beam irradiated products and methods thereof. In particular, the invention is directed to a products and methods that comprise an electron beam irradiated component and a second component. The electron beam irradiated component may be plastic. The second component may be a building material or construction material. The invention is also directed to methods of manufacturing a modified polymer material with an electron-beam. Methods comprise irradiating the polymer particles of the material by dosing with electron beam radiation to produce a modified polymer material comprising irradiated polymer particles.

Abstract: An electron beam emitter comprises an electron emission source capable of emitting electrons; a vacuum chamber containing the electron emission source; and a transmission window that keeps airtightness of the vacuum chamber and is capable of transmitting the electrons from the electron emission source. The transmission window includes a foil that transmits the electrons and a grid that does not transmit the electrons. The electron emission source includes an emission portion that emits the electrons and a non-emission portion that does not emit the electrons. The emission portion has a lower work function than the non-emission portion. The non-emission portion is prepared so as to prevent the electrons from reaching the grid.

Abstract: An electron beam emitter comprises an electron emission source capable of emitting electrons; a vacuum chamber containing the electron emission source; and a transmission window that keeps airtightness of the vacuum chamber and is capable of transmitting the electrons from the electron emission source. The transmission window includes a foil that transmits the electrons and a grid that does not transmit the electrons. The electron emission source includes an emission portion that emits the electrons and a non-emission portion that does not emit the electrons. The emission portion has a lower work function than the non-emission portion. The non-emission portion is prepared so as to prevent the electrons from reaching the grid.

Abstract: This invention proposes, among other things, systems and methods for providing ozone generators or plasma generators that generate an electric field in an electron generation chamber that is separate from a reaction chamber. An electron beam emitter in an electron generation chamber is configured to emit a beam of electrons and is separated from the reaction chamber by an electron permeable barrier that provides a window through which the beam of electrons passes. The electrons are accelerated to the required energy in the electron generation chamber and transmitted through the barrier to the reaction chamber, where an input gas source introduces an input gas into the reaction chamber. The input gas may react with the beam of electrons inside the reaction chamber to form an output gas comprising a plasma or a concentration of ozone, and the output gas passes from the reaction chamber to a wafer processing chamber.

Abstract: A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.