Patents by Inventor Kaveh Niazi

Kaveh Niazi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH-PERMEABILITY MAGNETIC SHIELD FOR IMPROVED PROCESS UNIFORMITY IN NONMAGNETIZED PLASMA PROCESS CHAMBERS
    Publication number: 20020127350
    Abstract: A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
    Type: Application
    Filed: March 7, 2001
    Publication date: September 12, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Kaveh Niazi, Tsutomu Tanaka, Canfeng Lai, Robert Duncan
  • High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
    Patent number: 6447651
    Abstract: A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0.5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: September 10, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Kaveh Niazi, Tsutomu Tanaka, Canfeng Lai, Robert Duncan
  • RF plasma source for material processing
    Patent number: 6239553
    Abstract: The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state.
    Type: Grant
    Filed: April 22, 1999
    Date of Patent: May 29, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Mike Barnes, Tetsuya Ishikawa, Kaveh Niazi, Tsutomu Tanaka
  • Process kit
    Patent number: 6189483
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: February 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Tetsuya Ishikawa, Padmanabhan Krishnaraj, Kaveh Niazi, Hiroji Hanawa
  • Multi-zone RF inductively coupled source configuration
    Patent number: 6083344
    Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: July 4, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tetsuya Ishikawa, Manus Wong, Shijian Li, Kaveh Niazi, Kenneth Smyth, Fred C. Redeker, Troy Detrick, Jay Dee Pinson, II