Patents by Inventor Kawai Yoichiro

Kawai Yoichiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
    Publication number: 20130042802
    Abstract: The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated.
    Type: Application
    Filed: July 17, 2009
    Publication date: February 21, 2013
    Inventors: Katsunori Danno, Akinori Seki, Hiroaki Saitoh, Kawai Yoichiro