Patents by Inventor Kay Lederer
Kay Lederer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11787965Abstract: The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ?1 to about ?3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.Type: GrantFiled: March 29, 2018Date of Patent: October 17, 2023Assignee: Novaled GmbHInventors: Kay Lederer, Steffen Runge, Jerome Ganier, Anke Limbach
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Patent number: 11322687Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) optionally at least one electrical dopant, and b) at least one cross-linked charge-transporting polymer comprising 1,2,3-triazole cross-linking units, a method for its preparation and a semiconducting device comprising the charge transporting semi-conducting material.Type: GrantFiled: September 6, 2013Date of Patent: May 3, 2022Assignee: Novaled GMBHInventors: Mike Zoellner, Kay Lederer, Anton Kiriy, Volodymyr Senkovskyy, Brigitte Isabell Voit
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Publication number: 20210005397Abstract: The present invention is related to a solar cell comprising a first electrode; a second electrode; and a stack of layers provided between the first electrode and the second electrode; wherein the stack of layers comprises one light absorbing layer provided with a perovskite crystal structure; and at least one dopant layer, wherein the dopant layer consists of one or more n-dopant material(s); or one or more p-dopant material(s).Type: ApplicationFiled: July 2, 2019Publication date: January 7, 2021Inventors: Kay Lederer, Steffen Runge, Hendrik Bolink, Michele Sessolo, Jorge Avila, Maria Grazia La Placa, Pablo B. Boix
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Patent number: 10873030Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting stType: GrantFiled: February 22, 2017Date of Patent: December 22, 2020Assignee: Novaled GmbHInventors: Kay Lederer, Steffen Runge, Jan Blochwitz-Nimoth, Felix Limberg, Hartmut Krüger
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Publication number: 20200032093Abstract: The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ?1 to about ?3 nitrile groups and a melting point of about <100° C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.Type: ApplicationFiled: March 29, 2018Publication date: January 30, 2020Inventors: Kay Lederer, Steffan Runge, Jerome Garnier, Anke Teichler
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Patent number: 10468601Abstract: The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein. The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalized electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.Type: GrantFiled: February 21, 2017Date of Patent: November 5, 2019Assignee: Novaled GmbHInventors: Kay Lederer, Steffen Runge, Felix Limberg, Hartmut Krueger
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Publication number: 20190058128Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) at least one electrical dopant, and b) a branched or cross-linked charge-transporting polymer comprising cyclobutenone cross-linking units of at least one of the general formulae la and/or lb, wherein aa) Pol1, Pol2, Pol3 and Pol4 are independently selected chains of the charge-transporting polymer, bb) X1, X2, X3, and X4 are independently selected optional spacer units or, independently, represent direct bonding of Pol1, Pol2, Pol3 and Pol4 chains to the cyclobutenone ring, cc) Z1, Z2, Z3, and Z4 are independently selected from H, halogen or a carbon-containing group; the charge transporting semi-conducting material being obtainable by a process comprising: i) providing a solution containing aaa) at least one precursor charge transporting compound comprising at least one covalently attacked alkenyloxy group having generic formula II wherein X is an optional spacer which is further linked to a charge transporting stType: ApplicationFiled: February 22, 2017Publication date: February 21, 2019Inventors: Kay Lederer, Steffen Runge, Jan Blochwitz-Nimoth, Felix Limberg, Hartmut Krüger
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Publication number: 20170244033Abstract: The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein. The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalised electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.Type: ApplicationFiled: February 21, 2017Publication date: August 24, 2017Inventors: Kay Lederer, Steffen Runge, Felix Limberg, Hartmut Krueger
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Publication number: 20150349262Abstract: The present invention relates to a charge transporting semi-conducting material comprising: a) optionally at least one electrical dopant, and b) at least one cross-linked charge-transporting polymer comprising 1,2,3-triazole cross-linking units, a method for its preparation and a semiconducting device comprising the charge transporting semi-conducting material.Type: ApplicationFiled: September 6, 2013Publication date: December 3, 2015Applicant: Novaled GmbHInventors: Mike Zoellner, Kay Lederer, Anton Kiriy, Volodymyr Senkovskyy, Brigitte Isabell Voit
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Patent number: 8964188Abstract: The invention relates to the field of measurement technology and concerns a method and an apparatus, such as may be used, by way of example, in thin-layer technology for organic dielectric semi-conducting or conducting layers on substrates. The object of the invention is to indicate a method and an apparatus with which both the surface topography of the coating and that of the surface may be determined independently of one another, at the same position. The object is achieved by a method wherein the three-dimensional topography of the coating is determined using chromatic white light measurement and, subsequently, the thickness of the coating is determined using UV interferometry, and the surface topography of the coated surface is determined by a comparison with the overall dimensions of the coated surface. The object is further achieved by an apparatus wherein an apparatus for chromatic white light measurement and an apparatus for UV interferometry are disposed on a test bench.Type: GrantFiled: June 15, 2012Date of Patent: February 24, 2015Assignees: Leibniz-Institut fur Polymerforschung Dresden E.V., Plastic Logic LimitedInventors: Alfredo Calvimontes, Kay Lederer
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Publication number: 20130110421Abstract: Performing an analysis of an electronic device sample by measuring a property at a plurality of points of said electronic device sample, and in advance of said analysis subjecting said plurality of points to at least one treatment that increases the difference in said property between at least two elements of said electronic device sample.Type: ApplicationFiled: May 6, 2011Publication date: May 2, 2013Applicant: PLASTIC LOGIC LIMITEDInventor: Kay Lederer
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Publication number: 20130038861Abstract: The invention relates to the field of measurement technology and concerns a method and an apparatus, such as may be used, by way of example, in thin-layer technology for organic dielectric semi-conducting or conducting layers on substrates. The object of the invention is to indicate a method and an apparatus with which both the surface topography of the coating and that of the surface may be determined independently of one another, at the same position. The object is achieved by a method wherein the three-dimensional topography of the coating is determined using chromatic white light measurement and, subsequently, the thickness of the coating is determined using UV interferometry, and the surface topography of the coated surface is determined by a comparison with the overall dimensions of the coated surface. The object is further achieved by an apparatus wherein an apparatus for chromatic white light measurement and an apparatus for UV interferometry are disposed on a test bench.Type: ApplicationFiled: June 15, 2012Publication date: February 14, 2013Applicants: Leibniz-Institut fur Polymreforschung Dresen e.V., PLASTIC LOGIC GmbHInventors: Alfredo CALVIMONTES, Kay LEDERER
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Patent number: 6858376Abstract: In a negative or positive photoresist layer structured with the aid of the customary lithography technique, the photoresist layer is heated briefly, in the region of the interface with the semiconductor substrate, to a temperature above the melting point to fuse the photoresist layer at the interface with the layer underneath on the semiconductor wafer.Type: GrantFiled: August 5, 2002Date of Patent: February 22, 2005Assignee: Infineon Technologies AGInventor: Kay Lederer
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Patent number: 6797029Abstract: In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The third physical unit has a laminar flow at right angles to the laminar flows of the two physical units and is operated with a slightly higher flow velocity. According to the Bernoulli equation, the static pressure in the third physical unit is therefore lower than in the surrounding two physical units. Advantageously, therefore, no contamination from the more highly loaded one of the two physical units passes over into the lesser loaded one of the two physical units.Type: GrantFiled: December 27, 2002Date of Patent: September 28, 2004Assignee: Infineon Technologies AGInventors: Kay Lederer, Steffen Hornig
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Publication number: 20030121417Abstract: In a process facility for producing semiconductor wafers, a third physical unit is configured between two physical units that produce mini environments. The third physical unit has a laminar flow at right angles to the laminar flows of the two physical units and is operated with a slightly higher flow velocity. According to the Bernoulli equation, the static pressure in the third physical unit is therefore lower than in the surrounding two physical units. Advantageously, therefore, no contamination from the more highly loaded one of the two physical units passes over into the lesser loaded one of the two physical units.Type: ApplicationFiled: December 27, 2002Publication date: July 3, 2003Inventors: Kay Lederer, Steffen Hornig
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Publication number: 20030027087Abstract: In a negative or positive photoresist layer structured with the aid of the customary lithography technique, the photoresist layer is heated briefly, in the region of the interface with the semiconductor substrate, to a temperature above the melting point to fuse the photoresist layer at the interface with the layer underneath on the semiconductor wafer.Type: ApplicationFiled: August 5, 2002Publication date: February 6, 2003Inventor: Kay Lederer
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Publication number: 20030027060Abstract: A negative photoresist for transferring a photomask to a semiconductor wafer includes a passivated component that is activated by an exposure radiation, the activated component being configured to interact with the uppermost layer of the semiconductor wafer at the interface, the interaction ensuring increased adhesion between the negative photoresist and the substrate. Alternatively, a positive photoresist for transferring a photomask to a semiconductor wafer includes a component that is passivated by an exposure radiation, the activated component being configured to interact with the uppermost layer of the semiconductor wafer at the interface, the interaction ensuring increased adhesion between the positive photoresist and the substrate.Type: ApplicationFiled: August 5, 2002Publication date: February 6, 2003Inventor: Kay Lederer