Abstract: A method for determining a carbon content of a sample in a TOC analyzer, includes the steps of: directing a carrier gas from an inlet through a high temperature furnace to an analysis unit; stopping the flow of the carrier gas through the high temperature furnace; injecting the sample into the high temperature furnace, which is used to vaporize and/or oxidize the sample at a high temperature to form water vapor and carbon dioxide gas; waiting until the sample injected into the high temperature furnace is vaporized; starting the flow of the carrier gas through the high temperature furnace and thereby transporting the carbon dioxide gas produced during vaporization and/or oxidation of the sample to an analysis unit; and determining the carbon content of the sample by means of the analysis unit on the basis of the carbon dioxide gas produced during the oxidation of the sample.

Abstract: The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a space between a bottom surface of the semiconductor wafer and top surface of the trough-shaped receptacle.

Abstract: The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is tilted to promote turbulent electrolyte flow in a space between a bottom surface of the semiconductor wafer and top surface of the trough-shaped receptacle.