Patents by Inventor Kay Tohyama

Kay Tohyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4810907
    Abstract: A semiconductor resistance element used in a semiconductor integrated circuit containing a plurality of MESFET's or JFET's as an active element, for interconnecting the active elements or for connecting to the external circuit, etc. This semiconductor resistance element is constituted by interconnecting the drain and gate electrodes of the MESFET or JFET and limiting the drain current thereof within a given range.
    Type: Grant
    Filed: July 1, 1988
    Date of Patent: March 7, 1989
    Assignee: Fujitsu Limited
    Inventor: Kay Tohyama
  • Patent number: 4777451
    Abstract: To increase a voltage gain of a differential circuit, constant current source type FETs in which a source and a gate are short circuited are used as a load element and as a current source. A constant voltage type FET is used as a clamp to clamp the load element. Therefore, a temperature characteristic and a deterioration of an AC characteristic, which cause problems in a conventional diode clamp type differential circuit, can be improved.
    Type: Grant
    Filed: September 14, 1987
    Date of Patent: October 11, 1988
    Assignee: Fujitsu Limited
    Inventor: Kay Tohyama