Patents by Inventor Kayo INOUE

Kayo INOUE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEALING RESIN, SEMICONDUCTOR DEVICE, AND PHOTOCOUPLER
    Publication number: 20160197224
    Abstract: A semiconductor device includes: a sealing resin and a semiconductor element. The sealing resin includes a base resin and a curing agent. The base resin includes isocyanuric acid having an epoxy group. The curing agent includes an acid anhydride having an acid anhydride group. A mole ratio of the acid anhydride group to the epoxy group is not less than 0.67 and not more than 0.8. A semiconductor element is covered with the sealing resin.
    Type: Application
    Filed: March 16, 2016
    Publication date: July 7, 2016
    Inventors: Tetsuya Muranaka, Kayo Inoue, Yuichi Ikedo
  • SEALING RESIN, SEMICONDUCTOR DEVICE, AND PHOTOCOUPLER
    Publication number: 20150295121
    Abstract: A semiconductor device includes: a sealing resin and a semiconductor element. The sealing resin includes a base resin and a curing agent. The base resin includes isocyanuric acid having an epoxy group. The curing agent includes an acid anhydride having an acid anhydride group. A mole ratio of the acid anhydride group to the epoxy group is not less than 0.67 and not more than 0.8. A semiconductor element is covered with the sealing resin.
    Type: Application
    Filed: June 26, 2015
    Publication date: October 15, 2015
    Inventors: Tetsuya Muranaka, Kayo Inoue, Yuichi Ikedo
  • SEALING RESIN, SEMICONDUCTOR DEVICE, AND PHOTOCOUPLER
    Publication number: 20150076524
    Abstract: A semiconductor device includes: a sealing resin and a semiconductor element. The sealing resin includes a base resin and a curing agent. The base resin includes isocyanuric acid having an epoxy group. The curing agent includes an acid anhydride having an acid anhydride group. A mole ratio of the acid anhydride group to the epoxy group is not less than 0.67 and not more than 0.8. A semiconductor element is covered with the sealing resin.
    Type: Application
    Filed: March 10, 2014
    Publication date: March 19, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tetsuya Muranaka, Kayo Inoue, Yuichi Ikedo
  • Light emitting element and method for manufacturing same
    Patent number: 8816378
    Abstract: According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: August 26, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Nunotani, Yasuhiko Akaike, Kayo Inoue, Katsufumi Kondo, Tokuhiko Matsunaga
  • LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME
    Publication number: 20130292729
    Abstract: According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.
    Type: Application
    Filed: June 27, 2013
    Publication date: November 7, 2013
    Inventors: Shinji NUNOTANI, Yasuhiko AKAIKE, Kayo INOUE, Katsufumi KONDO, Tokuhiko MATSUNAGA