Abstract: An illumination optical apparatus (8) includes a light source (10) and light conducting system (L) that conducts a light beam (14) from the light source to an object (M) such as a mask having a pattern, to be irradiated. A light-attenuating member (18) or other light-intensity controlling member, such as filter, for controlling the intensity of the light beam is arranged in the optical path between the light source and light conducting system. Also disclosed is a method for manufacturing semiconductor devices using the abovementioned illumination optical apparatus.

Abstract: Projection-exposure photolithography apparatus are disclosed that include a light source supported by a first structural body, an illumination optical system that is supported by a second structural body isolated from the first structural body, a first light-collecting system supported by the first structural body, and a second light-collecting system supported by the second structural body. The illumination optical system includes, at its incident side, a surface conjugate to a mask defining a mask pattern. Light reaches the incident surface from the second light-collecting system. The apparatus is arranged such that a prescribed surface and the exit plane of the light source are optically conjugate relative to each other by way of the first light-collecting system and the second light-collecting system.

Abstract: A change in the optical characteristics which is caused by an unevenness of the intensity of illumination, following a change of the form or the size of a multiple light source, is corrected by an adjustment mechanism with a simple structure. This mechanism further comprises a first correction device (21, 14B) which corrects unevenness of the intensity of illumination generated on a plane to be irradiated due to a change of the form and the size of the multiple light source made by a change device(13), and a second correction device (22, 14A1) which corrects at least one of a change of the back focus of a condenser optical system and a change in the telecentricity of the illumination light on the irradiated plane caused due to a correcting operation of the first correction device.