Patents by Inventor Kayoko Nagahara

Kayoko Nagahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND STORAGE MEDIUM
    Publication number: 20240126175
    Abstract: Disclosed is a method for forming a resist pattern including, in the following order, irradiating a part of a resist film containing a resist material with a first radiation, baking the resist film, irradiating the entire region including the part irradiated with the first radiation and other parts in the resist film with a second radiation in a batch, and forming a resist pattern by development for removing a part of the resist film.
    Type: Application
    Filed: September 20, 2023
    Publication date: April 18, 2024
    Inventors: Seiji NAGAHARA, Congque DINH, Makoto MURAMATSU, Kayoko CHO
  • Composition for polishing and method of polishing semiconductor substrate using same
    Patent number: 9090799
    Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.
    Type: Grant
    Filed: November 7, 2011
    Date of Patent: July 28, 2015
    Assignee: FUJIMI INCORPORATED
    Inventors: Toshio Shinoda, Kayoko Nagahara, Yutaka Inoue, Shuhei Takahashi, Toshihiro Miwa
  • COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME
    Publication number: 20130260650
    Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.
    Type: Application
    Filed: November 7, 2011
    Publication date: October 3, 2013
    Inventors: Toshio Shinoda, Kayoko Nagahara, Yutaka Inoue, Shuhei Takahashi, Toshihiro Miwa