Abstract: Instillation of a 1.5% (w/v) levofloxacin ophthalmic solution three times a day, which is the dosage or dose regimen of the present invention, has features to cure bacterial conjunctivitis in a shorter time than instillation of a 0.5% (w/v) ophthalmic solution three times a day, which is the conventional dosage or dose regimen, and not to increase the rate of occurrence of side effects. Curing the ocular infection in a short time leads to shortening of the duration of exposure of the ocular-infection-causing bacterium to levofloxacin. Therefore, the levofloxacin ophthalmic solution in the dosage or dose regimen of the present invention is eventually expected to suppress emergence of the resistant bacterium resulting from the long-term use of the levofloxacin ophthalmic solution in the conventional dosage or dose regimen.

Abstract: An object of the present invention is to provide an eyedrop which has a relatively low viscosity before instillation but is thickened on the eyeball surface at instillation. The eyedrop containing a viscous agent for ophthalmic use, which comprises a combination of hydroxyethylcellulose and dextran, exhibits a specific and synergistic thickening effect in the coexistence of mucin. Therefore, the eyedrop of the present invention is thickened on the eyeball surface upon contact with mucin in the precorneal tear film at instillation, whereby a desired pharmacological efficacy or refreshing feel can be sustained.

Abstract: A first photoresist layer has opening portions in a region where an n-channel MOS transistor should be formed and in a region where a collector leading region should be formed. Then, phosphorous is implanted with taking the first photoresist layer as a mask. The first photoresist layer is then removed and a second photoresist layer is formed. The second photoresist layer has opening portions in a region where an emitter region should be formed and in the region where the collector leading region should be formed. Phosphorous is implanted with taking the second photoresist layer as a mask to form an n-type selective diffusion region in a region below the region where the emitter region should be formed and in the region where the collector leading region should be formed. Then, the second photoresist layer is removed. A polycrystalline silicon layer is formed over the entire surface and arsenic is implanted therein to make it n-type.