Patents by Inventor Kaz Yoshioka

Kaz Yoshioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for drying a substrate
    Patent number: 7582414
    Abstract: A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion liquid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion liquid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: September 1, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Chung-Peng Ho, Kathleen Nafus, Kaz Yoshioka, Richard Yamaguchi
  • Method and system for drying a substrate
    Publication number: 20060216651
    Abstract: A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
    Type: Application
    Filed: May 26, 2006
    Publication date: September 28, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chung-Peng Ho, Kathleen Nafus, Kaz Yoshioka, Richard Yamaguchi
  • Method and system for drying a substrate
    Patent number: 7070915
    Abstract: A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: July 4, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Chung-Peng Ho, Kathleen Nafus, Kaz Yoshioka, Richard Yamaguchi
  • Method and system for drying a substrate
    Publication number: 20050046934
    Abstract: A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the baking process. This interaction has been shown to cause non-uniformity in critical dimension for the pattern formed in the thin film following the developing process.
    Type: Application
    Filed: August 29, 2003
    Publication date: March 3, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chung-Peng Ho, Kathleen Nafus, Kaz Yoshioka, Richard Yamaguchi