Abstract: A voltage drop Vzs is calculated based on an output current detection value Iac and a virtual synchronous impedance Zs or a corrected virtual synchronous impedance Zs?, and a value obtained by subtracting the voltage drop Vzs from an internal induced voltage Ef is output as a grid voltage command value Vac*. Zs calculation unit 7 limits an output current phase ? so that the output current phase ? is within an effective range by a phase limiter 12a, and calculates the corrected virtual synchronous impedance Zs? based on a limited output current phase ?, the internal induced voltage Ef, a grid voltage detection value Vac and a current limit value Ilim. Accordingly, in grid interconnection power conversion device that controls a virtual synchronous generator, it is possible to continue operation while suppressing an overcurrent and possess a synchronizing power generated by action or working of a virtual synchronous impedance.

Abstract: A mounting adapter includes: a first body section having a connection section attached to one side of an accessory device and a first holding arm that holds one side face of a portable type electronic device, a second body section having a second holding arm that is provided to project/retract from inside to outside and holds a side face of the portable type electronic device, a second holding arm urging member that urges the second holding arm in a direction opposite to the direction in which the second holding arm extends, and a hinge member that connects the first body section and the second body section, and the mounting adapter sandwiches the portable type electronic device between the first holding arm and the second holding arm in an open state when in use.

Abstract: A mounting adapter includes: a first body section having a connection section attached to one side of an accessory device and a first holding arm that holds one side face of a portable type electronic device, a second body section having a second holding arm that is provided to project/retract from inside to outside and holds a side face of the portable type electronic device, a second holding arm urging member that urges the second holding arm in a direction opposite to the direction in which the second holding arm extends, and a hinge member that connects the first body section and the second body section, and the mounting adapter sandwiches the portable type electronic device between the first holding arm and the second holding arm in an open state when in use.

Abstract: A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.

Abstract: A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.