Patents by Inventor Kazuaki Chiba
Kazuaki Chiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9388495Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.Type: GrantFiled: October 30, 2014Date of Patent: July 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Masahisa Watanabe, Hiroshi Kubota, Kazuaki Chiba
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Publication number: 20150125606Abstract: A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.Type: ApplicationFiled: October 30, 2014Publication date: May 7, 2015Inventors: Masahisa WATANABE, Hiroshi KUBOTA, Kazuaki CHIBA
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Patent number: 8012654Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: September 6, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 8003284Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: August 23, 2011Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7989124Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: June 22, 2010Date of Patent: August 2, 2011Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20100261099Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20100261101Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20100261100Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: June 22, 2010Publication date: October 14, 2010Inventors: Hiroki YOSHIKAWA, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7767366Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: March 8, 2007Date of Patent: August 3, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Patent number: 7767367Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: GrantFiled: March 8, 2007Date of Patent: August 3, 2010Assignees: Toppan Printing Co., Ltd., Shin-Etsu Chemical Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20070212618Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: March 8, 2007Publication date: September 13, 2007Inventors: Hiroki Yoshikawa, Yukio Inazuki, Satoshi Okazaki, Takashi Haraguchi, Tadashi Saga, Yosuke Kojima, Kazuaki Chiba, Yuichi Fukushima
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Publication number: 20070212619Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.Type: ApplicationFiled: March 8, 2007Publication date: September 13, 2007Inventors: Hiroki YOSHIKAWA, Yukio INAZUKI, Satoshi OKAZAKI, Takashi HARAGUCHI, Tadashi SAGA, Yosuke KOJIMA, Kazuaki CHIBA, Yuichi FUKUSHIMA