Abstract: The alloy material having fine grain size, which is suitable for the mass-production, the magnetic material of bulk having single phase and homogeneous composition and manufacturing method of them are offered. The alloy material comprises a plurality of phases different in composition, the grain size of each phase is 20 ?m or less, and the composition as a whole is equal to an NaZn13 type La(FexSi1-x)13 compound. When the alloy material is heat treated, various kinds of elements are sufficiently diffused in a short time, and magnetic material comprising an La(FexSi1-x)13 compound having an NaZn13 type crystal structure of a single phase and homogeneous composition can be efficiently obtained.

Abstract: A CPP magneto-resistive element includes a substrate and an antiferromagnetic layer, a fixed magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer that are sequentially formed on the substrate, wherein the antiferromagnetic layer includes an alloy of Mn and at least one element of a group including Pd, Pt, Ni, Ir, and Rh, wherein the specific resistance of the antiferromagnetic layer ranges from 10 ??·cm to 150 ??·cm at a temperature of 300 K.

Abstract: The magnetic material for magnetic refrigeration according to the present invention has an NaZn13-type crystalline structure and comprises iron (Fe) as a principal element (more specifically, Fe is substituted for the position of “Zn”) and hydrogen (H) in an amount of 2 to 18 atomic % based on all constitutional elements. Preferably, the magnetic material for magnetic refrigeration preferably contains 61 to 87 atomic % of Fe, 4 to 18 atomic % of a total amount of Si and Al, 5 to 7 atomic % of La. The magnetic material for magnetic refrigeration exhibits a large entropy change in a room temperature region and no thermal hysteresis in a magnetic phase transition. Therefore, when a magnetic refrigeration cycle is configured using the magnetic material for magnetic refrigeration, a stable operation can be performed.

Abstract: The magnetic material for magnetic refrigeration according to the present invention has an NaZn13-type crystalline structure and comprises iron (Fe) as a principal element (more specifically, Fe is substituted for the position of “Zn”) and hydrogen (H) in an amount of 2 to 18 atomic % based on all constitutional elements. Preferably, the magnetic material for magnetic refrigeration preferably contains 61 to 87 atomic % of Fe, 4 to 18 atomic % of a total amount of Si and Al, 5 to 7 atomic % of La. The magnetic material for magnetic refrigeration exhibits a large entropy change in a room temperature region and no thermal hysteresis in a magnetic phase transition. Therefore, when a magnetic refrigeration cycle is configured using the magnetic material for magnetic refrigeration, a stable operation can be performed.

Abstract: A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.

Abstract: The present invention aims to provide an excellent exchange coupling thin film consisting of a completely novel material other than FeMn or NiMn and having excellent corrosion resistance and high resistivity, and a magnetoresistive element and a magnetic head each of which include the exchange coupling thin film. The exchange coupling thin film includes an antiferromagnetic film mainly composed of a crystal phase of a body-centered cubic structure and containing Cr and element M where element M contains at least one element of the 3B group elements in the Periodic Table, or Al, Ga or In, and a ferromagnetic film containing at least one of Fe, Ne, and Co, both films being laminated in contact with each other, wherein magnetic exchange coupling is generated in the interface between the antiferromagnetic film and the ferromagnetic film.

Abstract: A bulk magnetoresistance effect material of a composition represented by the general formula: T.sub.100-A M.sub.A (wherein T is at least one element selected between Cu and Au; M is at least one element selected from the group consisting of Co, Fe, and Ni; and A is in the range: 1.ltoreq.A.ltoreq.50 by atomic percent) is prepared by casting a molten mixture of the above composition, and subjecting the resulting casting to homogenization and further to heat treatment. The bulk magnetoresistance effect material is high in the rate of change in the electrical resistance thereof, i.e., shows a large magnetoresistive effect and can be obtained in such bulk form in arbitrary shapes adaptable for various uses. Using the material, various types of magnetoresistive elements are obtained.

Abstract: As magnetically working substances capable of producing magnetically working abilities such as magnetic refrigeration or cooling in a wide range of temperatures with high efficiency, this invention utilizes amorphous alloys possessing a large magnetic moment and the spin glass property. Concrete examples of the amorphous alloys which meet the requirement are amorphous alloys containing rare earth metals, the same amorphous alloys absorbed hydrogen therein, and Fe-based amorphous alloys containing additional elements for formation of the amorphous phase. One element or the combination of two or more elements selected from the group just mentioned can be used, with the composition of alloys so adjusted for the desired magnetic transition points to be distributed or for the different magnetic transition points to be continuously distributed in a range of high to low temperatures.

Abstract: Antiferromagnetic chromium base invar-type alloys and a method of producing the same are disclosed. These alloys are produced by adding 0.05-10 wt% of at least one rare earth element to antiferromagnetic chromium base invar-type alloy consisting of 0.5-6 wt% of iron and/or silicon, 1.5-6 wt% of cobalt and/or manganese and remainder of chromium, and then subjecting the resulting alloy ingot to a primary hot working by heating at a temperature of 800.degree.-1200.degree. C, and have a reduction ratio of not less than 60% and a thermal expansion coefficient of not more than 4.times.10.sup.-6 /.degree. C.