Abstract: A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

Abstract: The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.

Abstract: The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

Abstract: The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc.According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.

Abstract: An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.

Abstract: In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the growth chamber, to a discharge chamber consists of a rotary disc which supports thereon a plurality of substrates and transfers them to the growth chamber and then to the discharge chamber, and all of the introduction chamber, the growth chamber and the discharge chamber are disposed at predetermined positions, respectively, so that the molecular beam crystal growth can be effected in a clean room which is separated from a maintenance room.

Abstract: A sample chucking apparatus including a clip provided at a plurality of positions correspondingly to a sample and operating closedly to release and hold the sample, with the clip being acutated by a magnetic force. A spring force counters the direction in which the clip operates, thereby simplifying the structure and ensuring a reliability on fixing or carrying of the sample.

Abstract: This invention is directed to a vacuum processing apparatus which is constructed so that a sample may be carried between a main vacuum chamber and a portion of the atmosphere outside the main vacuum chamber while the sample is retained in a vertical position. The sample is carried in the vertical position through several chambers, including a first vacuum preparatory chamber provided to be communicable with the main vacuum chamber and a second vacuum preparatory chamber provided to be communicable with both the first vacuum preparatory chamber and the atmosphere. By using this apparatus, and in particular by conveying the sample in a vertical position, it is possible to restrain the adhesion of foreign substances on the sample surface which is to be treated. It is also possible to reduce the vacuum load and properly maintain pressure within the main vacuum chamber, thereby enabling increased quality of treatment and also enhancing the manufacturing yield of a semiconductor element.

Abstract: Waste water containing organic materials is introduced into an aeration tank, and is subjected to aeration treatment in the presence of activated sludge, while supplying oxygen to the aeration tank. The tank provided with an air diffusion pipe at the bottom of the tank, an air dispersion device above the air diffusion pipe and a plurality of inside cylinders above the air dispersion device. An overall circulating stream and partial circulating streams are generated in the aeration tank.