Abstract: The present invention includes: an identification code generation unit that generates, from information of a company code including a first code that uniquely identifies a management target in a part of a company in the part of the company and a second code that identifies the part of the company, an identification code including a history of the management target; a hash processing unit that hashes the identification code generated by the identification code generation unit according to a hash function and converts the hashed identification code into a meaningless code; and a reference code generation unit that generates a reference code unified for the entire company based on the meaningless code converted by the hash processing unit.

Abstract: An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (? R/R) or the like, thereby achieving a structure suitable for increasing recording density.

Abstract: A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

Abstract: A tunnel-type magnetic detecting device is provided. The tunnel-type magnetic detecting device is capable of stably reducing the surface roughness of an insulating barrier layer, and capable of properly improving an MR effect typified by a resistance changing rate. A seed layer is formed in a laminated structure of an NiFeCr layer and an Al layer. This makes it possible to stably reduce the surface roughness of the insulating barrier layer as compared with a related art in which a seed layer is formed in a single-layer structure of an NiFeCr layer. Accordingly, according to the tunnel-type magnetic detecting device of the invention, the MR property typified by an excellent resistance changing rate (?R/R) can be obtained stably.

Abstract: A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient ? of the free magnetic layer.

Abstract: An insulating barrier layer including a lower insulating layer composed of Al—O and an upper insulating layer composed of CoFe—O and disposed on the lower insulating layer is formed on a second pinned magnetic layer. A free magnetic layer is formed on the insulating barrier layer. According to this structure, a high rate of change in resistance (?R/R) and a low RA (element resistance R×element area A) can be achieved.

Abstract: An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (? R/R) or the like, thereby achieving a structure suitable for increasing recording density.

Abstract: A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 ?. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (?R/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

Abstract: A second fixed magnetic layer is formed of a CoFeB layer of CoFeB and an interface layer of CoFe or Co provided in that order from the bottom. An insulating barrier layer composed of Al—O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al—O is formed as described above, a low RA and a high rate of change in resistance (?R/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (?R/R) can be suppressed as compared to that in the past.

Abstract: The invention provides a magnetoresistive element including a seed layer having a flat surface, which makes it possible to improve the flatness of all of the elements. A seed layer is formed in a two-layer structure of a first seed layer that is formed on a lower shield layer and a second seed layer that is formed underneath an anti-ferromagnetic layer, and the second seed layer is formed of ruthenium (Ru). According to this structure, the flatness of the surface of the seed layer is improved, which makes it possible to improve the flatness of interfaces between layers of an element formed on the seed layer. As a result, it is possible to manufacture a magnetoresistive element having a high dielectric breakdown voltage and high operational reliability.

Abstract: A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 ?. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (?R/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

Abstract: An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent?z?80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent?y?100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x?30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.

Abstract: A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

Abstract: A tunnel-type magnetic detecting device is provided. The tunnel-type magnetic detecting device is capable of stably reducing the surface roughness of an insulating barrier layer, and capable of properly improving an MR effect typified by a resistance changing rate. A seed layer is formed in a laminated structure of an NiFeCr layer and an Al layer. This makes it possible to stably reduce the surface roughness of the insulating barrier layer as compared with a related art in which a seed layer is formed in a single-layer structure of an NiFeCr layer. Accordingly, according to the tunnel-type magnetic detecting device of the invention, the MR property typified by an excellent resistance changing rate (?R/R) can be obtained stably.

Abstract: A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed magnetic layer with a nonmagnetic material layer therebetween and which varies in magnetization by an external magnetic field. A seed layer is provided below the magnetoresistive effect part. The seed layer includes an Al layer laminated on an NiFeCr layer.

Abstract: A magnetic detecting device is disclosed having a fixed magnetic layer, a free magnetic layer, and a nonmagnetic material layer between the fixed magnetic layer and the free magnetic layer. A laminated seed layer having NiFeCr is proximate the fixed magnetic layer.

Abstract: A magnetic detection element capable of increasing the magnetoresistance ratio (?R/R) and increasing the reproduction output by applying a surface modification treatment and improving the layer structure of a pinned magnetic layer, as well as a method for manufacturing the same, is provided. A surface of a non-magnetic intermediate layer formed from Ru or the like is subjected to a first treatment, in which the surface is activated by conducting a plasma treatment, and a second treatment, in which the surface is exposed to an atmosphere containing oxygen, a second pinned magnetic layer is allowed to have a two-layer structure composed of a non-magnetic material layer-side magnetic layer formed from Co and a non-magnetic intermediate layer-side magnetic layer formed from a CoFe alloy, and the film thickness ratio of the non-magnetic intermediate layer-side magnetic layer to the second pinned magnetic layer is specified to be 16% to 50%.

Abstract: Each of an antiferromagnetic layer and a pinned magnetic layer has a region containing a Cr element, thereby increasing an exchange coupling magnetic field (Hex) produced between the antiferromagnetic layer and the pinned magnetic layer. Therefore, the exchange coupling magnetic field produced between the antiferromagnetic layer and the pinned magnetic layer can be increased, and a coupling magnetic field due to RKKY interaction can also be increased, thereby increasing a one-directional exchange bias magnetic field (Hex*) in the pinned magnetic layer as compared with a conventional exchange coupling film.

Abstract: A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient ? of the free magnetic layer.

Abstract: An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent?z?80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent?y?100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x?30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.