Abstract: Provided is a solar cell element comprising a semiconductor substrate which has a p-type semiconductor region, wherein one or more surface layer-internal regions which have Si—O bonds are formed in the surface layer part of the p-type semiconductor region and a passivation layer is formed on the surface layer-internal regions. Also provided is a solar cell module comprising the solar cell element. A method for producing a solar cell element is further provided, said method comprising: a substrate preparation step for preparing a semiconductor substrate which has a p-type semiconductor region; a surface treatment step for exposing the surface of the p-type semiconductor region to plasma produced using an oxygen-containing gas, and forming surface layer-internal regions which have Si—O bonds in the surface layer part of the p-type semiconductor region; and a layer formation process for forming a passivation layer on the surface layer-internal regions.

Abstract: A high-efficiency solar cell device producible in a simplified manner, and a method of manufacturing the same are provided. An insulation layer is formed on the back surface side of a semiconductor substrate of a first conductivity type. Removing part of the insulation layer exposes part of the semiconductor substrate to form a plurality of first through holes. A first layer of the first conductivity type is formed on the insulation layer and on the part of the semiconductor substrate exposed in the plurality of first through holes, whereby first junction regions are formed. Removing part of the first layer and the insulation layer exposes part of the semiconductor substrate to form a plurality of second through holes. A second layer of an opposite conductivity type is formed on the first layer and on the part of the semiconductor substrate exposed in the plurality of second through holes, whereby second junction regions are formed.

Abstract: A light emitting element array is provided with a plurality of light emitting diodes arranged in a row, field-effect transistors connected in series with the respective light emitting diodes, shift registers for individually turning the respective field-effect transistors on by individually supplying drive signals to gates of the respective field-effect transistors, and an emission controller for driving the light emitting diodes by supplying the emission signals, whose levels are so differed as to correspond to the respective light emitting diodes, to the light emitting diodes connected with the field-effect transistors when these field-effect transistors are individually turned on.

Abstract: A light emitting element array is provided with a plurality of light emitting diodes arranged in a row, field-effect transistors connected in series with the respective light emitting diodes, shift registers for individually turning the respective field-effect transistors on by individually supplying drive signals to gates of the respective field-effect transistors, and an emission controller for driving the light emitting diodes by supplying the emission signals, whose levels are so differed as to correspond to the respective light emitting diodes, to the light emitting diodes connected with the field-effect transistors when these field-effect transistors are individually turned on.