Abstract: An aspect of the present disclosure is a transmission system including a modulated wave generation unit that generates an intermediate wave, which is a coherent wave in which a frequency component of either of two signals overlays a frequency spectrum, the two signals being a main signal indicating transmitted information to be transmitted and a control signal indicating management information, which is information on communication between a transmission source of the transmitted information and a communication destination of the transmission source, and a modulation unit that modulates the intermediate wave with a signal in which a frequency component does not overlay the frequency spectrum of the coherent wave generated by the modulated wave generation unit out of the two signals that are the main signal and the control signal. In the transmission system, a frequency band of the main signal and a frequency band of the control signal do not overlap each other.

Abstract: Provided a relay device that performs relay among a plurality of optical communication devices that perform communication using at least time division multiplexing, the device including a data length acquisition unit configured to acquire information on a data length of an uplink signal transmitted from the optical communication device using the uplink signal, a management control signal generation unit configured to generate a management control signal used for management and control, a management control signal division unit configured to divide the generated management control signal based on the information on the data length of the uplink signal acquired by the data length acquisition unit, and a management control signal superimposition unit configured to superimpose the divided management control signal on the uplink signal and transfers the superimposed signal to another optical communication device.

Abstract: A communication method includes, in a state where first information equipment and second information equipment are communicatively connected via optical switches and an optical communication network, switching, by an optical switch to which the first information equipment is connected, a connection destination of the first information equipment from an input/output port connected to the optical communication network to a control port to which the control device is connected in response to a predetermined operation of the first information equipment, receiving, by the control device, information indicating third information equipment that is a communication connection destination different from the second information equipment via the control port of the optical switches from the first information equipment, allocating, by the control device, a wavelength used for communication to the first information equipment and the third information equipment based on information indicating the communication connection de

Abstract: An assembly includes at least three strain gauges and is attached to an elastic transmission element of a strain wave gearing. The assembly is designed to measure a torque acting on the elastic transmission element. Output signals from each of the strain gauges are measured. The output signal of one of the strain gauges is predicted from the measured output signals of the other strain gauges. An error message is output based on the predicted output signal deviating from the respective measured output signal by more than a predetermined tolerance.

Abstract: In an optical module (first module (1)), a plurality of semiconductor laser elements (a first semiconductor laser element (21) through a third semiconductor laser element (23)) that output light of wavelengths which are different from each other from light emitting points are mounted on a base member (10). The base member (10) has a reference surface (11) serving as a reference in a height direction (Z) and a mounting surface (a first mounting surface (12a) and a second mounting surface (12b)) on which the semiconductor laser elements are mounted. At least some of the plurality of semiconductor laser elements are different from each other in a height (a first light emission height (TL1) through a third light emission height (TL3)) from a surface in contact with the mounting surface to the light emitting points, and are substantially equal in a height (reference height (HL)) from the reference surface to the light emitting points.

Abstract: A semiconductor light-emitting device 10 includes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Abstract: The present technology relates to a solid-state image sensor and an electronic device that can expand a dynamic range while suppressing degradation of image quality. A solid-state image sensor includes a pixel unit in which basic pattern pixel groups are arranged, each of the basic pattern pixel groups having output pixels of a plurality of colors arranged according to a predetermined pattern, the output pixel being a pixel based on an output unit of a pixel signal, the output pixel of at least one color among the output pixels having three or more types of sizes, and a signal processing unit configured to perform synthesis processing for a plurality of the pixel signals from a plurality of the output pixels having a same color and different sizes. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: The present technology relates to a solid-state image sensor and an electronic device that can expand a dynamic range while suppressing degradation of image quality. A solid-state image sensor includes a pixel unit in which basic pattern pixel groups are arranged, each of the basic pattern pixel groups having output pixels of a plurality of colors arranged according to a predetermined pattern, the output pixel being a pixel based on an output unit of a pixel signal, the output pixel of at least one color among the output pixels having three or more types of sizes, and a signal processing unit configured to perform synthesis processing for a plurality of the pixel signals from a plurality of the output pixels having a same color and different sizes. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: The present technology relates to an image sensor, an electronic apparatus, a signal transmission system, and a control method that are capable of easily reducing adverse effects of a parasitic capacitance. An assist signal line is adjacent to a VSL and placed along the VSL, a signal output from a pixel flowing through the VSL, and a signal control unit causes a similar signal to flow through the assist signal line, the similar signal having a similarity to a signal that flows through the VSL. The present technology is applicable to, for example, an image sensor including a VSL through which a signal output from a pixel flows, and a signal transmission system including a transmission path through which a signal flows.

Abstract: A semiconductor light-emitting device 10 includes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.

Abstract: A light emitting apparatus that includes at least one kind of light emitting elements of which the number is one or more, and a phosphor that is excited by output light of the light emitting element. In a case where all light emitting elements mounted before the phosphor is mounted in the light emitting apparatus emit light, the light emitting apparatus has a peak wavelength of output light in a first wavelength region of 440 nm or longer and shorter than 460 nm, and has a peak wavelength of output light in a second wavelength region of 460 nm to 490 nm.

Abstract: Provided is a light-emitting device that is able to adjust a color temperature by power supplied from a single power source. The light-emitting device includes an anode electrode land, a cathode electrode land, and three or more wires that are provided in parallel and are connected to the anode electrode land and the cathode electrode land, in which at least three wires among the three or more wires have different forward current-forward voltage characteristics and are connected to different light emitting portions, and the color temperature of light emitted from the whole of the light-emitting portions is able to be adjusted.

Abstract: A semiconductor light-emitting element includes: a base made of metal; a cap mounted on the base; a semiconductor laser chip mounted over an upper surface of the base; and a lead through which the semiconductor laser chip is supplied with electric power. The base has a notch provided in a region of a bottom surface thereof. The lead is disposed so as to extend vertically through the base in the region of the base where the notch is provided. The semiconductor laser chip is mounted over a region of the base that is free from the notch. An upper end of the lead and the semiconductor laser chip are housed in an internal space surrounded by the cap and the base.

Abstract: A light emitting apparatus that includes at least one kind of light emitting elements of which the number is one or more, and a phosphor that is excited by output light of the light emitting element. In a case where all light emitting elements mounted before the phosphor is mounted in the light emitting apparatus emit light, the light emitting apparatus has a peak wavelength of output light in a first wavelength region of 440 nm or longer and shorter than 460 nm, and has a peak wavelength of output light in a second wavelength region of 460 nm to 490 nm.

Abstract: The present technology relates to a solid-state image sensor and an electronic device that can expand a dynamic range while suppressing degradation of image quality. A solid-state image sensor includes a pixel unit in which basic pattern pixel groups are arranged, each of the basic pattern pixel groups having output pixels of a plurality of colors arranged according to a predetermined pattern, the output pixel being a pixel based on an output unit of a pixel signal, the output pixel of at least one color among the output pixels having three or more types of sizes, and a signal processing unit configured to perform synthesis processing for a plurality of the pixel signals from a plurality of the output pixels having a same color and different sizes. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: The present technology relates to a solid-state image sensor and an electronic device that can expand a dynamic range while suppressing degradation of image quality. A solid-state image sensor includes a pixel unit in which basic pattern pixel groups are arranged, each of the basic pattern pixel groups having output pixels of a plurality of colors arranged according to a predetermined pattern, the output pixel being a pixel based on an output unit of a pixel signal, the output pixel of at least one color among the output pixels having three or more types of sizes, and a signal processing unit configured to perform synthesis processing for a plurality of the pixel signals from a plurality of the output pixels having a same color and different sizes. The present technology can be applied to, for example, a CMOS image sensor.

Abstract: The light emitting device includes at least one light emitting element that emits light having a peak emission wavelength in a wavelength range from 380 nm to 480 nm inclusive; a first green phosphor that is excited by the primary light emitted by the light emitting element and emits light having the peak emission wavelength in the green region; a second green phosphor that is excited by the primary light and emits light having the peak emission wavelength in the green region; and a red phosphor that is excited by the primary light and emits light having the peak emission wavelength in the red region. The peak emission wavelength of the light emitted by the second green phosphor is shorter than the peak emission wavelength of the light emitted by the first green phosphor.

Abstract: Provided is a light-emitting device that is able to adjust a color temperature by power supplied from a single power source. The light-emitting device includes an anode electrode land, a cathode electrode land, and three or more wires that are provided in parallel and are connected to the anode electrode land and the cathode electrode land, in which at least three wires among the three or more wires have different forward current-forward voltage characteristics and are connected to different light emitting portions, and the color temperature of light emitted from the whole of the light-emitting portions is able to be adjusted.

Abstract: According to this invention, an oriented copper plate which has a highly developed cube texture and has strength and breaking elongation greater than those of a conventional material having a cube texture, a copper-clad laminate, a flexible circuit board that is excellent in terms of folding flexibility, and an electronic device are provided, and a process for producing the oriented copper plate is established. This invention relates: an oriented copper plate, which contains 0.03% by mass to 1.0% by mass of Cr, the remainder of which is composed of copper and inevitable impurities, wherein the copper plate has a <100> main orientation so that the area percentage of a <100> preferred orientation region is not less than 60.

Abstract: A magnetic field component in a Z direction is guided by a magnetic field guide layer and applied to a magnetic sensor in an X direction that is the same as a sensitivity axis direction thereof, and a detection output is obtained. A bridge circuit is formed with a plurality of magnetic sensors and configured such that an output is not provided for a magnetic field component in the X direction. However, when an external magnetic field in the X direction is drawn to the magnetic field guide layer, variation of sensitivity for the X direction may occur. Thus, soft magnetic characteristics of a first portion of the magnetic field guide layer are deteriorated to decrease the magnetic permeability of the first portion.