Abstract: The present disclosure provides a voltage detector capable of alerting a worker to nearby presence of a voltage source regardless of the worker's awareness simply by being worn on the worker's body. In a voltage detector for detecting approach to a voltage source, a voltage induced in a human body due to approach to a voltage source is measured by a first electrode of a detection circuit, a voltage to ground is measured by a second electrode of the same circuit, the detection circuit captures a current generated due to a difference between an electric potential of the first electrode and an electric potential of the second electrode, and output from the detection circuit is displayed for warning when the human body insulated from the ground approaches the voltage source.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

Abstract: An electricity-storing device includes a first electrode, a second electrode of opposite polarity as the first electrode, and a separator. The first electrode includes a current collector foil, an active material layer formed on at least one surface of the current collector foil, and an electrical resistance layer formed on the at least one surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer, at least a portion of an interface between the active material layer and the electrical resistance layer including a mixed phase where constituents from the active material layer and the electrical resistance layer intermingle.

Abstract: Provided are an electrode assembly including a sheet-shaped current collector that has, on at least one face thereof, a mixture agent layer containing an active material and is spirally wound, in which the current collector has, in a portion on a side of at least one end of a winding axis, a non-mixture agent layer part having no mixture agent layer formed therein, and a mass per unit area of the mixture agent layer is larger in an edge portion on the side of the non-mixture agent layer part by 0.3% or more and 1.0% or less than in a portion other than the edge portion; and an electric storage device including the electrode assembly.

Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

Abstract: Provided is a battery which has less tendency to experience delamination or loss of short circuit prevention layer and/or active material layer during manufacture and use. A battery comprising a laminated electrode assembly in which a positive electrode, a negative electrode, and a separator are laminated together; wherein an alumina-containing layer containing ?-alumina particles is formed on at least one species selected from among the group consisting of the positive electrode, the negative electrode, and the separator. The fact that alumina-containing layer(s) is or are made to contain ?-alumina particles makes it possible to obtain high bond strength between alumina-containing layer(s) and electrode(s) comprising metal(s), current collector(s) and/or active material(s) making up electrode(s), and/or separator(s).

Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Abstract: An electricity-storing device includes a first electrode, a second electrode of opposite polarity as the first electrode, and a separator.

Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Abstract: An electricity-storing device electrode includes a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At at least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle.

Abstract: An electricity-storing device electrode includes a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At at least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle.

Abstract: A pattern forming device includes a plurality of tanks, and a power supply device. Each of the tanks has an open end having the same shape as a profile shape of a corresponding one of regions of a surface of a workpiece, in which different types of films are to be formed, and stores a corresponding one of electrodeposition solutions used to form the different types of films in a state where the open end is in contact with the surface. The power supply device applies a predetermined voltage to between the workpiece that serves as a first electrode, and each one of second electrodes in the tanks.

Abstract: Provided are an electrode assembly including a sheet-shaped current collector that has, on at least one face thereof, a mixture agent layer containing an active material and is spirally wound, in which the current collector has, in a portion on a side of at least one end of a winding axis, a non-mixture agent layer part having no mixture agent layer formed therein, and a mass per unit area of the mixture agent layer is larger in an edge portion on the side of the non-mixture agent layer part by 0.3% or more and 1.0% or less than in a portion other than the edge portion; and an electric storage device including the electrode assembly.

Abstract: This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1<X1 <1.8, and in the second metal nitride layer 8, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.

Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.