Abstract: In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing ?-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.

Abstract: A paper sheet handling machine (for example, a banknote handling machine (10)) includes: a storage unit (for example, an escrow unit (20), banknote storages (30), a banknote storage cassette (40)) configured to store a paper sheet transported from a transport unit (16); and a shifting unit (19) provided in the transport unit (16) and configured to shift the paper sheet transported by the transport unit (16), in a width direction orthogonal to a direction in which the paper sheet is transported, according to a position, in the width direction, of a specific member (for example, a tape (136) in the escrow unit (20), a pair of feed rollers of a banknote feeding mechanism (32, 42) provided in the banknote storages (30), a banknote storage cassette (40)) in the storage unit.

Abstract: A loudspeaker diaphragm includes resin and hollow glass member particles contained in the resin. Further, a loudspeaker includes the above-described loudspeaker diaphragm, a magnetic circuit, a frame connected to the magnetic circuit, and a voice coil body having one end connected to the loudspeaker diaphragm and the other end disposed inside a magnetic gap in the magnetic circuit.

Abstract: A paper sheet handling apparatus (for example, a banknote handling apparatus) includes a holding unit (for example, each holding member) which holds a portion of the storage bag near an opening thereof, a sealing unit (for example, each heating member) which seals the opening of the storage bag held by the holding unit, and a placement unit (for example, each stage) that is movable in a substantially vertical direction and on which at least a part of the storage bag held by the holding unit is placed. When a sealing process is performed, the placement unit on which at least a part of the storage bag held by the holding unit is placed is raised.

Abstract: A sheet handling apparatus (for example, banknote handling apparatus 20) includes a storing and feeding unit (25) in which a sheet is stored on a rotary member (for example, drum (25a)) by winding the sheet on the rotary member and the sheet wound on the rotary member can be fed from the rotary member, a transport unit (23) that transports the sheet fed from the storing and feeding unit (25), a curl correction mechanism (70) that corrects a curl of the sheet transported by the transport unit (23), and a stacking unit (for example, banknote collection bag (34)) in which the sheet that has passed through the curl correction mechanism (70) is stacked.

Abstract: In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.

Abstract: In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a CVD method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing ?-diketone gas and NO gas to the target substrate. Then, the recess is further filled by forming a cobalt film on the target substrate by the ALD method or the CVD method using an organic metal compound gas.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A paper sheet handling machine (for example, a banknote handling machine (10)) includes: a storage unit (for example, an escrow unit (20), banknote storages (30), a banknote storage cassette (40)) configured to store a paper sheet transported from a transport unit (16); and a shifting unit (19) provided in the transport unit (16) and configured to shift the paper sheet transported by the transport unit (16), in a width direction orthogonal to a direction in which the paper sheet is transported, according to a position, in the width direction, of a specific member (for example, a tape (136) in the escrow unit (20), a pair of feed rollers of a banknote feeding mechanism (32, 42) provided in the banknote storages (30), a banknote storage cassette (40)) in the storage unit.

Abstract: An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A history information management method includes detecting competing access requests from among a plurality of access requests, utilizing history information that are generated by the plurality of access requests, each of the plurality of access requests being related to a plurality of data that are respectively mapped to a plurality of accounts; specifying an executed access request from among the detected competing access requests based on information relating to an executed access request; and specifying, for each of the plurality of accounts, part of the history information relating to an executed access to the data based on the specified access request and the history information.

Abstract: A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract: A non-transitory computer-readable medium including a program, which when executed by a computer, causes the computer to execute a process including: referring to data-size information indicating size of data corresponding to a query for acquiring the data stored in a storage, the data-size information and the data being stored in the storage and the data-size information being associated with the data in the storage; specifying an amount of the data corresponding to the query in accordance with the data-size information; and determining whether allows an output of the data corresponding to the query in accordance with the specified amount of the data and a data amount acceptable for the storage.

Abstract: A first turbocharger comprises a first center housing and a first return passage. A second turbocharger comprises a second center housing and a second return passage. The first return passage joins the second return passage at a junction. The length of the second return passage from the second center housing to the junction is longer than that of the first return passage from the first center housing to the junction. A bellows-shaped vibration absorption portion is provided at the second return passage. The first return passage comprises a first upstream return passage and a first downstream return passage, and the first upstream and downstream return passages are connected to each other via the flexible hose.

Abstract: There are provided first and second water supply passages to supply cooling water from an engine to first and second center housings of first and second turbochargers, and first and second return passages to return the cooling water from the first and second turbochargers to the engine. A cooling-water connection portion of the first water supply is located above the level of a cooling-water connection portion of the second water supply passage. A vapor releasing passage is provided between the second turbocharger and an upper tank provided on the outside of an engine body at a position located above the connection portion of the second return passage of the second turbocharger. Accordingly, the function of vapor releasing from the first and second turbochargers can be improved, thereby increasing the layout flexibility around the engine.

Abstract: A loudspeaker diaphragm contains polylactic acid, and bamboo charcoal mixed in the polylactic acid. The diaphragm does not affect environment and provides a loudspeaker with high sound quality.

Abstract: A speaker diaphragm containing resin and carbonized bamboo material with a large degree of flexibility in setting physical properties, moisture-proof reliability and strength secured, superior appearance, and productivity and dimensional stability increased, which allows making characteristics and sound highly accurately, and designing with great originality.

Abstract: A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter.