Patents by Inventor Kazuaki Ootsuka
Kazuaki Ootsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8107807Abstract: A lighting device including a substrate, and at least three light emitting elements mounted on the substrate, each having an upper light emitting surface in rectangular shape and side light emitting surfaces in rectangular shape. The light emitting elements are positioned to surround a light-gathering region where the light emitting elements are not located, and one of the side light emitting surfaces of each light emitting element is directed to face approximately a central portion of the light-gathering region.Type: GrantFiled: March 22, 2007Date of Patent: January 31, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hiroki Iwanaga, Akio Amano, Kenji Shimomura, Kazuaki Ootsuka, Hideto Furuyama
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Patent number: 7923740Abstract: The present invention relates to a light emitting apparatus including a semiconductor light emitting element and a transparent ceramic phosphor for converting a wavelength of a light emitted from the semiconductor light emitting element, wherein the semiconductor light emitting element emits an ultraviolet light, and the ceramic phosphor corresponding to the semiconductor light emitting element has (i) a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm and (ii) a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.Type: GrantFiled: February 23, 2006Date of Patent: April 12, 2011Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Masami Okamura, Masaaki Tamatani, Naomi Shida, Kazuaki Ootsuka, Yukihiro Fukuta
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Patent number: 7838311Abstract: A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.Type: GrantFiled: December 23, 2008Date of Patent: November 23, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Akiko Suzuki, Shinetsu Fujieda, Tatsuoki Kono, Toshihide Takahashi, Kazuaki Ootsuka, Hiroaki Oshio, Hideo Tamura
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Patent number: 7799245Abstract: A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.Type: GrantFiled: July 15, 2009Date of Patent: September 21, 2010Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Publication number: 20100166407Abstract: A lighting device including a substrate (10), and at least three light emitting elements (11) mounted on the substrate, each having an upper light emitting surface in rectangular shape and side light emitting surfaces in rectangular shape. The light emitting elements are positioned to surround a light-gathering region (12) where the light emitting elements are not located, and one of the side light emitting surfaces of each light emitting element is directed to face approximately a central portion of the light-gathering region.Type: ApplicationFiled: March 22, 2007Publication date: July 1, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroki Iwanaga, Akio Amano, Kenji Shimomura, Kazuaki Ootsuka, Hideto Furuyama
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Patent number: 7635438Abstract: A europium-activated alkaline earth orthosilicate luminescent material is provided, which includes a compound having a composition represented by a following formula 1: (SrxBayCazEuw)2SiO4??formula 1 wherein, x, y, z and w satisfy following relational expressions 2, and 4 to 7, and are values satisfying the expression 3 when a, b, c and d are assumed to be 573, 467, 623 and 736, respectively: x+y+z+w=1??expression 2 600?ax+by+cz+dw??expression 3 0?x/(1?w)?0.95??expression 4 0?y/(1?w)?0.4??expression 5 0<z/(1?w)?0.95??expression 6 0.02?w?0.2??expression 7 the luminescent material shows an emission band having a peak wavelength of 600 nm or more when the luminescent material is excited by ultraviolet radiation having a wavelength of 254 nm.Type: GrantFiled: July 18, 2007Date of Patent: December 22, 2009Assignees: Kabushiki Kaisha Toshiba, Toshiba Lighting & Technology CorporationInventors: Masaaki Tamatani, Hisayo Uetake, Ryosuke Hiramatsu, Kazuaki Ootsuka, Yasushi Hattori, Naomi Shida
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Publication number: 20090285995Abstract: An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.Type: ApplicationFiled: July 15, 2009Publication date: November 19, 2009Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Patent number: 7601277Abstract: Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu2+, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.Type: GrantFiled: January 31, 2008Date of Patent: October 13, 2009Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Patent number: 7572391Abstract: An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.Type: GrantFiled: June 19, 2008Date of Patent: August 11, 2009Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., LtdInventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Publication number: 20090176323Abstract: A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.Type: ApplicationFiled: December 23, 2008Publication date: July 9, 2009Inventors: Akiko Suzuki, Shinetsu Fujieda, Tatsuoki Kono, Toshihide Takahashi, Kazuaki Ootsuka, Hiroaki Oshio, Hideo Tamura
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Publication number: 20090127507Abstract: A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm.Type: ApplicationFiled: January 21, 2009Publication date: May 21, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryosuke Hiramatsu, Masaaki Tamatani, Hironori Asai, Kazuaki Ootsuka
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Publication number: 20090057698Abstract: A light emitting apparatus 1 comprises: a semiconductor light emitting element 2; and a transparent ceramic phosphor 11 for converting a wavelength of a light emitted from the semiconductor light emitting element 2, wherein the semiconductor light emitting element 2 emits an ultraviolet light, and the ceramic phosphor 11 corresponding to the semiconductor light emitting element 2 has: a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm; and a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.Type: ApplicationFiled: February 23, 2006Publication date: March 5, 2009Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Masami Okamura, Masaaki Tamatani, Naomi Shida, Kazuaki Ootsuka, Yukihiro Fukuta
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Patent number: 7498736Abstract: A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm.Type: GrantFiled: January 23, 2007Date of Patent: March 3, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Ryosuke Hiramatsu, Masaaki Tamatani, Hironori Asai, Kazuaki Ootsuka
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Patent number: 7468147Abstract: Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu2+, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.Type: GrantFiled: October 13, 2005Date of Patent: December 23, 2008Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Publication number: 20080283797Abstract: Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu2+, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.Type: ApplicationFiled: January 31, 2008Publication date: November 20, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Publication number: 20080251765Abstract: An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.Type: ApplicationFiled: June 19, 2008Publication date: October 16, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.Inventors: Naomi Shida, Masaaki Tamatani, Yoshihito Tsutsui, Kazuaki Ootsuka, Ryosuke Hiramatsu
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Publication number: 20080253952Abstract: Disclosed is a method for manufacturing a nitrogen-containing fluorescent substance comprising accommodating an oxide fluorescent substance containing two or more elements in a receptacle made of a material containing carbon, and sintering the oxide fluorescent substance in a mixed gas atmosphere containing nitrogen gas.Type: ApplicationFiled: June 20, 2008Publication date: October 16, 2008Inventors: Ryosuke Hiramatsu, Kazuaki Ootsuka, Naomi Shida, Masaaki Tamatani, Hisayo Uetake, Yoshihito Tsutsui
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Patent number: 7414272Abstract: Disclosed is a method for manufacturing a nitrogen-containing fluorescent substance comprising accommodating an oxide fluorescent substance containing two or more elements in a receptacle made of a material containing carbon, and sintering the oxide fluorescent substance in a mixed gas atmosphere containing nitrogen gas.Type: GrantFiled: July 13, 2005Date of Patent: August 19, 2008Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd., Toshiba Lighting & Technology CorporationInventors: Ryosuke Hiramatsu, Kazuaki Ootsuka, Naomi Shida, Masaaki Tamatani, Hisayo Uetake, Yoshihito Tsutsui
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Publication number: 20080017831Abstract: A europium-activated alkaline earth orthosilicate luminescent material is provided, which includes a compound having a composition represented by a following formula 1: (Srx Bay Caz Euw)2SiO4??formula 1 wherein, x, y, z and w satisfy following relational expressions 2, and 4 to 7, and are values satisfying the expression 3 when a, b, c and d are assumed to be 573, 467, 623 and 736, respectively: x+y+z+w=1??expression 2 600?ax+by+cz+dw??expression 3 0?x/(1?w)?0.95??expression 4 0?y/(1?w)?0.4??expression 5 0<z/(1?w)?0.95??expression 6 0.02?w?0.2??expression 7 the luminescent material shows an emission band having a peak wavelength of 600 nm or more when the luminescent material is excited by ultraviolet radiation having a wavelength of 254 nm.Type: ApplicationFiled: July 18, 2007Publication date: January 24, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA LIGHTING & TECHNOLOGY CORPORATIONInventors: Masaaki Tamatani, Hisayo Uetake, Ryosuke Hiramatsu, Kazuaki Ootsuka, Yasushi Hattori, Naomi Shida
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Publication number: 20080018234Abstract: A luminescent material is provided, which includes a material formed of a single composition containing the main crystal phase and an activator which causes light emission. The material exhibits a narrowband light emission spectrum in a wavelength ranging from 540 nm to 550 nm and a broadband light emission spectrum in a wavelength ranging from 500 nm to 600 nm when the material is excited with light having the main light emission peak having a wavelength ranging from 370 nm to 460 nm.Type: ApplicationFiled: January 23, 2007Publication date: January 24, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryosuke Hiramatsu, Masaaki Tamatani, Hironori Asai, Kazuaki Ootsuka