Abstract: A conveyance device includes a conveyance member, a guide, and a rotator. The conveyance member has a conveyance surface with a joint, the conveyance member to convey an object to be conveyed, with the object on the conveyance surface. The guide approaches the conveyance surface and guides the object from or to the conveyance member. The rotator contacts the conveyance surface. The guide displaces in a direction perpendicular to the conveyance surface, in conjunction with displacement of the rotator when the rotator contacts the joint.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Abstract: A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: Provided is a method for producing a SiC single crystal having a concave growth surface and containing no inclusions, even when conducting large diameter crystal growth. This is achieved by a method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the liquid level, to cause crystal growth of a SiC single crystal, wherein the seed crystal holding shaft has a shaft portion and a seed crystal holding portion at the bottom end of the shaft portion, and the ratio of the diameter D1 of the shaft portion to the diameter D2 of the seed crystal holding portion (D1/D2) is no greater than 0.28.

Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.

Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Abstract: A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.

Abstract: A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si—C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mm2 or greater, depth of Si—C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si—C solution with high-frequency coil.

Abstract: Provided is a method for producing a SiC single crystal wherein a 4H—SiC single crystal is grown by minimizing generation of polytypes other than 4H. A method for producing a SiC single crystal by a solution process, wherein a seed crystal is 4H—SiC, and a (000-1) face of the seed crystal is a growth surface, wherein the method includes: setting a temperature at a center section of a region of a surface of a Si—C solution where the growth surface of the seed crystal contacts to 1900° C. or higher, and limiting a ?Tc/?Ta to 1.7 or greater, wherein the ?Tc/?Ta is a ratio of a temperature gradient ?Tc between the center section and a location 10 mm below the center section in the vertical direction, with respect to a temperature gradient ?Ta between the center section and a location 10 mm from the center section in the horizontal direction.

Abstract: The provided by the disclosure is a SiC single crystal production method permitting suppression of temperature variation of a Si—C solution even in a case of long-time crystal growth. The SiC single crystal production method includes: a preparation step of preparing a production apparatus including a crucible, a seed shaft, and an internal lid; a formation step of heating the material in the crucible to form the Si—C solution; a growth step of bringing the seed crystal into contact with the Si—C solution to produce the Si—C single crystal on the seed crystal; an internal lid adjustment step of vertically moving one of the internal lid and the crucible relative to the other during the growth step to keep an amount of variation in vertical distance between the internal lid and the Si—C solution within a first reference range.

Abstract: A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si—C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si—C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si—C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).

Abstract: Provided is a method for producing a SiC single crystal having a concave growth surface and containing no inclusions, even when conducting large diameter crystal growth. This is achieved by a method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the liquid level, to cause crystal growth of a SiC single crystal, wherein the seed crystal holding shaft has a shaft portion and a seed crystal holding portion at the bottom end of the shaft portion, and the ratio of the diameter D1 of the shaft portion to the diameter D2 of the seed crystal holding portion (D1/D2) is no greater than 0.28.

Abstract: A method of manufacturing an SiC single crystal includes the steps of melting a raw material in a crucible (14) to produce an SIC solution (15); and bringing a crystal growth surface (24A) of an SiC seed crystal (24) into contact with the SiC solution to cause an SiC single crystal to grow on the crystal growth surface. The crystal structure of the SiC seed crystal is the 4H polytype. The off-angle of the crystal growth surface is not smaller than 1° and not larger than 4°. The temperature of the SIC solution during growth of the SiC single crystal is not lower than 1650° C. and not higher than 1850° C. The temperature gradient in a portion of the SiC solution directly below the SiC seed crystal during growth of the SiC single crystal is higher than 0° C./cm and not higher than 19° C./cm.

Abstract: A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si—C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mm2 or greater, depth of Si—C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si—C solution with high-frequency coil.

Abstract: Provided is a crystal producing apparatus capable of producing a single crystal having excellent quality. The crystal producing apparatus for growing a single crystal on a crystal growth surface of a seed crystal in a raw material solution by a liquid phase growth method, includes: a liquid tub which accommodates a raw material solution; a crystal holding element which holds a seed crystal; and a solution flowing element which allows the raw material solution in the liquid tub to flow. Among these, the crystal holding element is able to hold the seed crystal in the liquid tub and is movable in at least a partial region on an xy plane perpendicular to a z-axis that extends in a depth direction of the liquid tub.

Abstract: According to one embodiment, a printer includes a commodity file configured to store, by commodity, commodity data including at least names of commodities, a message file configured to store massage data allocated to the commodity data and combined with the commodity data, an extracting unit configured to extract, from the message file, the message data allocated to none of the commodity data, a display unit configured to display the message data extracted by the extracting unit, and a deleting unit configured to delete, from the message file, the message data displayed by the display unit.