Abstract: The invention is directed to the provision of a method for manufacturing a semiconductor light-emitting element that eliminates the need for preparing a plurality of different fluorescent sheets. The method for manufacturing the semiconductor light-emitting element containing an LED die includes the steps of arranging the LED die on a fluorescent sheet containing a fluorescent substance and adjusting the amount by which the LED die is depressed into the fluorescent sheet so that the semiconductor light-emitting element has a desired color emission.

Abstract: The invention is directed to the provision of a method for manufacturing a semiconductor light-emitting element that eliminates the need for preparing a plurality of different fluorescent sheets. The method for manufacturing the semiconductor light-emitting element containing an LED die includes the steps of arranging the LED die on a fluorescent sheet containing a fluorescent substance and adjusting the amount by which the LED die is depressed into the fluorescent sheet so that the semiconductor light-emitting element has a desired color emission.

Abstract: The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 ?m but not greater than 30 ?m.

Abstract: The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 ?m but not greater than 30 ?m.

Abstract: A resin sealed semiconductor device includes a heat radiation member fixed to a saling resin. The heat radiation member is formed of a clad material including a first metal having a coefficient of linear expansion close to that of the sealing resin, and a second metal laminated on the first metal and having good adhesive property to the sealing resin. Thus, the heat radiation member can satisfy all three conditions required for the heat radiation member at a satisfactory level, i.e., (1) heat conductivity being excellent, (2) a difference of a coefficient of linear expansion between the heat radiation member and a sealing resin being small, and (3) adhesive property to the sealing resin being good.

Abstract: There is disclosed a resin sealed semiconductor device in which a heat radiation member formed integrally with a sealing resin is constituted of a clad material comprising a first material having a coefficient of linear expansion approximate to that of the sealing resin, and a second metal laminated on a surface of the first metal and having good adhesive properties to the sealing resin. There can be obtained the metallic heat radiation member which can satisfy all three conditions required for the heat radiation member at a satisfactory level, i.e., (1) heat conductivity being excellent, (2) a difference of a coefficient of linear expansion between the heat radiation member and a sealing resin being small, and (3) adhesive properties to the sealing resin being good.

Abstract: A matrix display panel comprising a plurality of liquid crystal display elements. Each liquid crystal display element is connected to a plurality of diode rings which are connected in series between a scanning electrode and a data electrode. Each diode ring comprises a pair of diodes of opposite polarity which are connected in parallel.

Abstract: A liquid crystal display device having a color filter comprises a liquid crystal shutter device, at least one color filter layer formed on one surface of the liquid crystal shutter device, and at least one diffusion preventing layer for protecting the color filter layer. The color filter layer is prepared by a photolithographic process comprising the steps of forming a layer being colored of gelatin and the like on one surface of the liquid crystal shutter device, coating a photoresist layer thereon, while illuminating the liquid crystal shutter device by white light from the other surface thereof, applying a voltage to the selected opposed surface thereof, applying a voltage to the selected opposed electrode groups to form a latent image in alignment with the electrode groups by a photochemical action, developing the latent image to form a photomask, and while using this mask as a guide, coloring the layer being colored.

Abstract: An "active matrix" type of liquid crystal matrix display panel, in which diodes are employed as switching elements coupled to each liquid crystal display element, photo-sensing elements such as photo-diodes are formed upon the display panel to enable data input to the panel by variation of the electrical characteristics of the photo-sensing elements by selectively varying the level of light incident thereon. The photo-sensing elements, when composed of photo-diodes, can be formed during the same manufacturing process and in the same manufacturing steps as those in which the diode switching elements are formed, so that no appreciable increase in manufacturing cost is entailed by adding such a data input function.

Abstract: In a liquid crystal color display panel comprising a color filter layer superposed on one surface of a liquid crystal shutter device for transmitting or intercepting light by the application of a voltage across electrode groups. This color filter layer is formed of photosensitive emulsion layers which are sensitive to specific color light respectively and provided on a transparent plate. While illuminating the liquid crystal shutter device from the other surface thereof by specific color light sequentially. The voltage is applied across selected opposed electrode groups to form latent images in alignment with the positions of the electrode groups. Then, the latent images are developed to produce colors. In this manner, filter layers are made in alignment with the shutter device.