Abstract: An estimation device collects sensor data representing a change in a load along a time series as a change in a voltage value from a sensor that generates a voltage when a load applied to an area changes, and estimates a matter related to a measurement target passing through a predetermined area by using sensor data collected from the sensor installed in the predetermined area.

Abstract: A semiconductor memory device includes memory finger structures and a kerf region. The memory finger structures include a first stacked body including conductive layers and semiconductor columns opposed to the conductive layers. The kerf region includes a second stacked body including layers corresponding to at least a part of the conductive layers. A first region in the kerf region is arranged in a first direction with a part of the memory finger structures and includes a part of the second stacked body. A second region in the kerf region is arranged in the first direction with another part of the memory finger structures and does not include the second stacked body. A third region in the kerf region extends in a second direction along an end portion on the memory plane region side in the first direction of the kerf region and includes another part of the second stacked body.

Abstract: According to one embodiment, a semiconductor storage device includes a first stacked body, plate-shaped portions, and a wall portion. The first stacked body, in which electrically conductive layers and first insulating layers are stacked alternately one by one, includes pillar bodies that penetrate the electrically conductive layers in a stacking direction of the electrically conductive layers. The plate-shaped portions extend in a first direction intersecting the stacking direction and divide the first stacked body into blocks. The wall portion includes first and second portions. The first and second portions respectively extend in a second direction intersecting the first direction and the stacking direction and are arranged in the stacking direction. The second portion includes an outer edge connected to a side surface of the first portion and inclined with respect to the staking direction at an angle larger than an angle defined by the side surface and the stacking direction.

Abstract: According to an embodiment, a semiconductor memory device includes a substrate, a stacked body, a first insulating film, and a first film. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode films extending in a first direction along an upper surface of the substrate and stacked with spacing from each other. An end part of the stacked body has a stepped shape provided with a terrace for each of the electrode films. The first insulating film is provided on the end part of the stacked body. The first film is provided on the first insulating film, and extends in a direction tilted with respect to the first direction.

Abstract: In a BiCMOS device, a device isolation film separating the bipolar transistor region from the MOS region is taller than the substrate at least where it contacts the bipolar transistor region, and is preferably taller than the same layer where it contacts the MOS transistor region. This makes it possible to maintain the processing accuracy of a MOS transistor while stabilizing the diode current characteristics of the bipolar transistor.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: In a BiCMOS device, a device isolation film separating the bipolar transistor region from the MOS region is taller than the substrate at least where it contacts the bipolar transistor region, and is preferably taller than the same layer where it contacts the MOS transistor region. This makes it possible to maintain the processing accuracy of a MOS transistor while stabilizing the diode current characteristics of the bipolar transistor.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: A semiconductor substrate is formed with trenches, and each of the trenches includes: a gate electrode portion in which a gate electrode is arranged; and a gate lead portion which is brought into contact with an interconnect for electrically connecting the gate electrode to the outside. In the gate lead portion for electrically connecting the gate electrode to the outside, an end of each of the trenches has a greater width than a portion of the trench other than the end.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: A semiconductor substrate is formed with trenches, and each of the trenches includes: a gate electrode portion in which a gate electrode is arranged; and a gate lead portion which is brought into contact with an interconnect for electrically connecting the gate electrode to the outside. In the gate lead portion for electrically connecting the gate electrode to the outside, an end of each of the trenches has a greater width than a portion of the trench other than the end.

Abstract: A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded.

Abstract: A development processing apparatus includes a processing unit for storing a substrate S and a processing solution supply nozzle arranged above the substrate S stored in the processing unit. A processing solution storage is formed inside the supply nozzle. A supply passage for supplying the processing solution into the solution storage is connected to the supply nozzle. A plurality of eject holes for ejecting the processing solution in the solution storage are formed in a lower surface of the supply nozzle. In this processing apparatus, the upper surface of the solution storage consists of at least one inclined surface, and an exhaust port is formed in a high portion of the inclined surface.

Abstract: A current measuring circuit for measuring discharging current and charging current of a battery, which is selectively connected to a load and a charger. The current measuring circuit comprises a resistor connected in series with the battery having a sufficiently low resistance value as not to substantially restrain the output current from the battery and a differential amplifier for amplifying a potential difference between both ends of the resistor. By providing a switch for short-circuiting one input terminal and the other input terminal of the differential amplifier, an offset/drift voltage of the differential amplifier can be obtained. This offset/drift voltage is used for correcting the output voltage from the differential amplifier at the time of current measurement and, thereby, the discharging current and charging current of the battery can be measured accurately.