Patents by Inventor Kazue Hosoki

Kazue Hosoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8202238
    Abstract: A thin film integrated circuit which is mass produced at low cost and a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: June 19, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Miho Komori, Yurika Satou, Kazue Hosoki, Kaori Ogita
  • Publication number: 20100025831
    Abstract: To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
    Type: Application
    Filed: July 22, 2009
    Publication date: February 4, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Miho KOMORI, Yurika SATOU, Kazue HOSOKI, Kaori OGITA
  • Patent number: 7566640
    Abstract: To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: July 28, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Miho Komori, Yurika Satou, Kazue Hosoki, Kaori Ogita
  • Patent number: 7298347
    Abstract: The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: November 20, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kazue Hosoki
  • Publication number: 20070166954
    Abstract: To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer, forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
    Type: Application
    Filed: December 14, 2004
    Publication date: July 19, 2007
    Applicant: Semiconductor Energy Laboratory, Co., Ltd.
    Inventors: Shunpei Yamazaki, Miho Komori, Yurika Satou, Kazue Hosoki, Kaori Ogita
  • Publication number: 20030132716
    Abstract: The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.
    Type: Application
    Filed: January 21, 2003
    Publication date: July 17, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd, a Japan corporation
    Inventors: Shunpei Yamazaki, Jun Koyama, Kazue Hosoki
  • Patent number: 6528951
    Abstract: The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: March 4, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kazue Hosoki
  • Publication number: 20020005696
    Abstract: The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.
    Type: Application
    Filed: June 12, 2001
    Publication date: January 17, 2002
    Inventors: Shunpei Yamazaki, Jun Koyama, Kazue Hosoki