Patents by Inventor Kazue Takahashi
Kazue Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6186153Abstract: Providing a dry cleaning method capable of removing deposition films which adhere to the inner walls of a semiconductor manufacturing apparatus-that is, removing dust production sources therefrom. To this end, the dry cleaning process is supplemented by a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to pealing off of deposition films with an increase in the number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.Type: GrantFiled: March 18, 1998Date of Patent: February 13, 2001Assignee: Hitachi, Ltd.Inventors: Hiroyuki Kitsunai, Nobuo Tsumaki, Shigeru Kakuta, Kazuo Nojiri, Kazue Takahashi
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Patent number: 6171438Abstract: A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.Type: GrantFiled: January 8, 1999Date of Patent: January 9, 2001Assignee: Hitachi, Ltd.Inventors: Toshio Masuda, Kazue Takahashi, Mitsuru Suehiro, Tetsunori Kaji, Saburo Kanai
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Patent number: 6048434Abstract: A substrate holding system is provided for holding a substrate in a substrate etching apparatus by using electrostatic force. An electrical insulating member is also provided having a top surface approximately at the same level as the treated surface of the substrate and having an inner side surface in adjacent relationship with a surface of the substrate forming the periphery of the substrate. The inner side surface of the electrical insulating member faces the periphery of the substrate in substantially parallel relationship with a direction normal to the treated surface of the substrate. A dielectric film is formed on one surface of a metallic member having a flow passage for circulating a coolant to control the temperature of the substrate. An electrically insulating material member is placed on and in contact with a surface of the metallic member.Type: GrantFiled: June 20, 1996Date of Patent: April 11, 2000Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Kazue Takahashi, Youichi Ito, Yoshifumi Ogawa, Hiroyuki Shichida, Tsunehiko Tsubone
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Patent number: 5985035Abstract: In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.Type: GrantFiled: July 2, 1998Date of Patent: November 16, 1999Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Kazue Takahashi, Youichi Ito, Yoshifumi Ogawa, Hiroyuki Shichida, Tsunehiko Tsubone
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Patent number: 5961774Abstract: In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.Type: GrantFiled: August 1, 1997Date of Patent: October 5, 1999Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Kazue Takahashi, Youichi Ito, Yoshifumi Ogawa, Hiroyuki Shichida, Tsunehiko Tsubone
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Patent number: 5906684Abstract: In a method of holding a substrate and a substrate holding system where, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.Type: GrantFiled: March 31, 1998Date of Patent: May 25, 1999Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Kazue Takahashi, Youichi Ito, Yoshifumi Ogawa, Hiroyuki Shichida, Tsunehiko Tsubone
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Patent number: 5895586Abstract: There are provided a plasma processing apparatus and a plasma processing method which are suitable for processing a processed substance using a gas plasma containing fluorine atoms.Structural materials used for a high vacuum processing chamber of a plasma processing apparatus are aluminum, aluminum having an anodic oxide coating processed surface and a material having a film of aluminum oxide or a film having aluminum oxide as a main component. A part or the whole of the inner surfaces of the processing chamber is constructed with a pre-fluorinated material.When plasma processing of a processed substance is performed using a gas plasma containing fluorine atoms in the processing chamber having the pre-fluorinated inner surfaces, time-varying processing characteristic can be suppressed.Type: GrantFiled: November 12, 1996Date of Patent: April 20, 1999Assignee: Hitachi, Ltd.Inventors: Tetsunori Kaji, Saburo Kanai, Satoshi Ito, Ryoji Hamasaki, Tetsuo Ono, Tatehito Usui, Kazue Takahashi, Kazutami Tago
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Patent number: 5874012Abstract: A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder.Type: GrantFiled: March 8, 1996Date of Patent: February 23, 1999Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Kazue Takahashi, Kouichi Okamura, Ryoji Hamasaki, Satoshi Ito
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Patent number: 5792304Abstract: In a method of a holding substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.Type: GrantFiled: September 16, 1994Date of Patent: August 11, 1998Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Kazue Takahashi, Youichi Ito, Yoshifumi Ogawa, Hiroyuki Shichida, Tsunehiko Tsubone
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Patent number: 5781400Abstract: The present invention allows the electrostatically attracting electrode, whose size corresponds to large-diameter wafers, to be fabricated easily and with precision.The first electrode 1 is provided with a recess in which to install the second electrode 2. An insulating film 4 is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film 3, which is then polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.Type: GrantFiled: September 18, 1996Date of Patent: July 14, 1998Assignee: Hitachi, Ltd.Inventors: Kazue Takahashi, Youichi Itou, Saburo Kanai, Seiichiro Kanno
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Patent number: 5697751Abstract: Transfer and processing of semiconductor wafers are performed while maintaining the wafer surfaces in a vertical orientation by holding the water substrate with electrostatic chucking of the rear face thereof. Thereby, the floor area of the transfer and processing system becomes almost the same regardless of the wafer size. Because only the back of the wafer comes in contact with a transfer member, the wafer front surface is kept clean and moreover wafer transfer can be done quickly.Type: GrantFiled: May 22, 1995Date of Patent: December 16, 1997Assignee: Hitachi, Ltd.Inventor: Kazue Takahashi
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Patent number: 5556204Abstract: This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. In this way, a sample temperature can be regulated rapidly without increasing the scale of the apparatus.Type: GrantFiled: May 19, 1994Date of Patent: September 17, 1996Assignee: Hitachi, Ltd.Inventors: Naoyuki Tamura, Manabu Edamura, Kazue Takahashi
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Patent number: 5536359Abstract: A semiconductor device manufacturing apparatus and its method, measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light, such as infrared light, is introduced from a light introducing unit into the processing chamber. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.Type: GrantFiled: September 20, 1994Date of Patent: July 16, 1996Assignee: Hitachi, Ltd.Inventors: Hiroki Kawada, Kazue Takahashi, Manabu Edamura, Saburo Kanai, Naoyuki Tamura
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Patent number: 5442183Abstract: A charged particle beam apparatus includes a charged particle beam generating system for causing a charged particle source to generate a charged particle beam. A focusing system focuses the charged particle beam onto a sample. A deflecting system causes the focused charged particle beam to scan the surface of the sample. An evacuating system evacuates a space through which the charged particle beam passes. A detector detects information obtained by irradiating the charged particle beam onto the sample. An image display system displays as an image the status of distribution of the information over the sample surface based on a detection signal forwarded from the detector. The focusing system is entirely constituted by an electrostatic lens containing a plurality of lens electrodes, one of the lens electrodes being a final electrode located closest to the sample.Type: GrantFiled: October 19, 1993Date of Patent: August 15, 1995Assignee: Hitachi, Ltd.Inventors: Hironobu Matsui, Mikio Ichihashi, Shinjiroo Ueda, Tadashi Otaka, Kazue Takahashi, Toshiaki Kobari, Kenji Odaka
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Patent number: 5259735Abstract: An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.Type: GrantFiled: April 24, 1992Date of Patent: November 9, 1993Assignee: Hitachi, Ltd.Inventors: Kazue Takahashi, Shinjiro Ueda, Manabu Edamura, Naoyuki Tamura, Kazuaki Ichihashi
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Patent number: 5254856Abstract: A charged particle beam apparatus includes a charged particle beam generating system for causing a charged particle source to generate a charged particle beam. A focusing system focuses the charged particle beam onto a sample. A deflecting system causes the focused charged particle beam to scan the surface of the sample. An evacuating system evacuates a space through which the charged particle beam passes. A detector detects information obtained by irradiating the charged particle beam onto the sample. An image display system displays as an image the status of distribution of the information over the sample surface based on a detection signal forwarded from the detector. The focusing system is entirely constituted by an electrostatic lens containing a plurality of lens electrodes, one of the lens electrodes being a final electrode located closest to the sample.Type: GrantFiled: June 18, 1991Date of Patent: October 19, 1993Assignee: Hitachi, Ltd.Inventors: Hironobu Matsui, Mikio Ichihashi, Shinjiroo Ueda, Tadashi Otaka, Kazue Takahashi, Toshiaki Kobari, Kenji Odaka
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Patent number: 4511269Abstract: A printing head is disclosed in which each attraction member is driven by a magnetic attraction and an impact printing operation is carried out by a strain energy caused by a displacement of a spring member provided on the attraction member. The fulcrum of rotation of the attraction member is defined between the attraction member and a magnetic polar face of a yoke constituting a magnetic circuit together with the attraction member. Means for adjusting the resilient force of the spring member is engaged with a free end of the spring member.Type: GrantFiled: March 31, 1983Date of Patent: April 16, 1985Assignee: Hitachi, Ltd.Inventors: Kazue Takahashi, Kenzi Okuna, Isao Nakajima, Mineo Harada, Yutaka Kako
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Patent number: 4392423Abstract: A printing hammer driving apparatus for high-speed printers comprises a lever member acting as a hammer operating part, an armature forming a part of a magnetic circuit, and an electromagnet forming, together with the armature, the magnetic circuit. The lever member has a rotational supporting point at the base end thereof and is made of a light-weight non-magnetic material. The armature is projected in one of the rotational directions of the lever member from the intermediate part of the lever member. The electromagnet has at least one core and an exciting coil wound on the core. A core has a magnetic pole face perpendicular to the direction of attraction of the armature and a magnetic pole face parallel to the direction of attraction of the armature.Type: GrantFiled: May 27, 1980Date of Patent: July 12, 1983Assignees: Hitachi, Ltd., Hitachi Koki Co., Ltd.Inventors: Isao Nakajima, Koji Tagusari, Kenji Okuna, Toru Hayama, Kazue Takahashi, Michihiro Watanabe, Sumihisa Kotani