Abstract: A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Abstract: The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed.

Abstract: A vacuum processing method using an apparatus including a processing chamber disposed in a vacuum reactor and having plasma formed thereon, a sample stage having a sample placed on the upper plane thereof, and a gas introducing mechanism, wherein the sample stage includes a gas supply port for introducing thermal conductance gas between the sample stage and the sample to be processed. The method includes placing a dummy sample on the sample stage, introducing dust removal gas between the sample stage and the dummy sample, and removing particles attached to the sample stage via the flow of dust removal gas.

Abstract: The invention provides a vacuum processing apparatus having a function for removing particles on the surface of the sample stage in order to improve the yield of the sample being processed.

Abstract: The present invention allows the electrostatically attracting electrode, whose size corresponds to large diameter wafers, to be fabricated easily and with precision. The first electrode is provided with a recess in which to install the second electrode. An insulating film is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film, which is the polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.

Abstract: An electrostatic chuck for holding a substrate, including an electrode block which serves as an electrode for electrostatic attraction and a plurality of electrostatic attraction arranged on a surface of the electrode block. The electrostatic attraction members are disposed so as to attract the substrate electrostatically and to come in contact with the substrate. An insulating material covers the surface of the electrode block other than attraction surfaces of the electrostatic attraction members. Grooves made by the insulating material are provided between the individual electrostatic attraction members.

Abstract: An electrostatic chuck for holding a substrate, including an electrode block which serves as an electrode for electrostatic attraction and a plurality of electrostatic attraction arranged on a surface of the electrode block. The electrostatic attraction members are disposed so as to attract the substrate electrostatically and to come in contact with the substrate. An insulating material covers the surface of the electrode block other than attraction surfaces of the electrostatic attraction members. Grooves made by the insulating material are provided between the individual electrostatic attraction members.