Patents by Inventor Kazufumi Sato
Kazufumi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020028407Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.Type: ApplicationFiled: August 3, 2001Publication date: March 7, 2002Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6284430Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices and a method for forming a finely patterned resist layer therewith. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) tert-butyl (meth)acrylate units; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as diphenyliodonium trifluoromethane sulfonate.Type: GrantFiled: September 7, 2000Date of Patent: September 4, 2001Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6255041Abstract: Disclosed is a method for forming an extremely finely patterned resist layer on a substrate surface by using a positive-working chemical-amplification photoresist composition in the manufacturing process of semiconductor devices.Type: GrantFiled: April 14, 1999Date of Patent: July 3, 2001Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6245930Abstract: Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.Type: GrantFiled: May 24, 1999Date of Patent: June 12, 2001Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hideo Hada, Fumitake Kaneko, Mitsuru Sato, Kazufumi Sato, Toshimasa Nakayama
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Patent number: 6225476Abstract: Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula &Brketopenst;CH2—CR1(—CO—O—CR2R3R4)&Brketclosest;, in which R1 is a hydrogen atom or a methyl group, R2 and R3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.Type: GrantFiled: April 4, 2000Date of Patent: May 1, 2001Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Kazufumi Sato, Hiroshi Komano
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Patent number: 6159652Abstract: Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms;and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxy-carbonyloxy groups.Type: GrantFiled: February 9, 1998Date of Patent: December 12, 2000Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Mitsuru Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Etsuko Iguchi, Yoshika Sakai, Kazufumi Sato, Toshimasa Nakayama
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Patent number: 6087063Abstract: Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula.brket open-st.CH.sub.2 --CR.sup.1 (--CO--O--CR.sup.2 R.sup.3 R.sup.4).brket close-st.,in which R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 and R.sup.3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R.sup.4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.Type: GrantFiled: June 23, 1998Date of Patent: July 11, 2000Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Kazufumi Sato, Hiroshi Komano
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Patent number: 6077644Abstract: Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.Type: GrantFiled: December 8, 1998Date of Patent: June 20, 2000Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Kazufumi Sato, Hiroshi Komano, Toshimasa Nakayama
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Patent number: 5976760Abstract: Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.Type: GrantFiled: July 22, 1997Date of Patent: November 2, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hideo Hada, Fumitake Kaneko, Mitsuru Sato, Kazufumi Sato, Toshimasa Nakayama
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Patent number: 5955240Abstract: Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.Type: GrantFiled: October 29, 1996Date of Patent: September 21, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5948589Abstract: Proposed is an improved chemical sensitization-type positive-working photoresist composition of high sensitivity and high pattern resolution for the photolithographic patterning works in the manufacture of semiconductor devices, which exhibits excellent post-exposure stability of the latent image formed by the pattern-wise exposure of the resist layer to actinic rays not to be affected relative to the fidelity of pattern reproduction and sensitivity even by standing for a length of time after the exposure to actinic rays before the subsequent processing treatment. The composition is characterized by the formulation of, in addition to an acid generating compound to release an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution by the presence of an acid, an amine compound such as triethylamine and a carboxylic acid such as salicylic acid in combination.Type: GrantFiled: June 4, 1996Date of Patent: September 7, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5945517Abstract: Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photo-sensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(=N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups.Type: GrantFiled: July 21, 1998Date of Patent: August 31, 1999Assignees: Tokyo Ohka Kogyo Co., Ltd., Daito Chemix CorporationInventors: Kazuyuki Nitta, Kazufumi Sato, Toshiharu Shimamaki, Kunio Hayakawa, Shin-ya Kuramoto
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Patent number: 5945248Abstract: Proposed is a positive-working chemical-sensitization photoresist composition having advantages in respect of high resolution of patterning, high photosensitivity and orthogonal cross sectional profile of the patterned resist layer as well as in respect of little dependency of the performance on the nature of the substrate surface. The composition comprises:(A) 100 parts by weight of a film-forming hydroxyl-containing resin of a specified narrow molecular weight distribution substituted by acid-dissociable groups for a part of the hydroxyl groups which causes an increase of solubility in an aqueous alkaline solution by the interaction with an acid; and(B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a disulfone compound represented by the general formulaR.sup.1 --SO.sub.2 --(C.dbd.N.sub.2 ).sub.n --SO.sub.2 --R.sup.2,in which the subscript n is 0 or 1 and R.sup.1 and R.sup.Type: GrantFiled: July 22, 1997Date of Patent: August 31, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Kazufumi Sato, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5929271Abstract: Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo?3.1.Type: GrantFiled: August 15, 1997Date of Patent: July 27, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hideo Hada, Kazufumi Sato, Hiroshi Komano, Toshimasa Nakayama
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Patent number: 5908730Abstract: Proposed is a positive- or negative-working chemical-sensitization photoresist composition having advantages in respect of the contrast and resolution of patterning, photosensitivity and cross sectional profile of the patterned resist layer as well as in respect of stability of the latent image formed by pattern-wise exposure to light before post-exposure baking treatment. The composition comprises: (A) 100 parts by weight of a film-forming resinous ingredient which causes a change, i.e. increase or decrease, of solubility in an aqueous alkaline solution by the interaction with an acid; and (B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a diazomethane compound represented by the general formulaR.sup.1 --SO.sub.2 --C(.dbd.N.sub.2)--SO.sub.2 --R.sup.2,in which R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group substituted on the cyclic nucleus by an acid-dissociable group such as a tert-butoxycarbonyl and acetal groups.Type: GrantFiled: July 22, 1997Date of Patent: June 1, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazuyuki Nitta, Kazufumi Sato, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5874195Abstract: Proposed is a novel positive-working photoresist composition of the chemical sensitization type capable of giving a finely patterned resist layer having an excellent cross sectional profile even for a discretely isolated pattern with high sensitivity and high resolution. The composition comprises, besides (a) a compound generating an acid by the irradiation with actinic rays, (b) a resinous ingredient capable of being imparted with increased solubility in an alkaline developer solution in the presence of an acid and (c) an organic solvent which is a ketone, ether or ester as the basic ingredients of the chemical sensitization type photoresist compositions, (d) an N,N-dialkyl carboxylic acid amide such as N,N-dimethyl formamide and N,N-dimethyl acetamide in a specified proportion relative to the component (b).Type: GrantFiled: November 10, 1997Date of Patent: February 23, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5856058Abstract: Proposed is a novel chemical sensitization-type positive-working photoresist composition used for the photolithographic patterning works in the manufacture of semiconductor devices exhibiting an excellent halation-preventing effect in the patternwise exposure to light. The composition comprises, in addition to conventional ingredients including an acid-generating agent capable of releasing an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution in the presence of an acid, a unique halation inhibitor which is an esterification product between a specified phenolic compound and a naphthoquinone-1,2-diazide sulfonic acid.Type: GrantFiled: June 7, 1996Date of Patent: January 5, 1999Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5854357Abstract: A polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups.Type: GrantFiled: February 9, 1998Date of Patent: December 29, 1998Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Mitsuru Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Etsuko Iguchi, Yoshika Sakai, Kazufumi Sato, Toshimasa Nakayama
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Patent number: 5817444Abstract: Proposed is a novel chemical-sensitization positive-working photoresist composition suitable for fine patterning of a resist layer in the manufacture of electronic devices. The composition is advantageous in various properties of photoresist composition without little dependency on the nature of the substrate surface, on which the photoresist layer is formed, with or without an antireflection undercoating layer. The most characteristic ingredient in the inventive composition is the film-forming resinous ingredient which is a combination of a first polyhydroxystyrene resin substituted by tetrahydropyranyl groups for the hydroxyl groups and a second hydroxystyrene resin substituted by alkoxyalkyl groups for the hydroxyl groups in a specified weight proportion of the first and second resins.Type: GrantFiled: September 11, 1997Date of Patent: October 6, 1998Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama
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Patent number: 5770343Abstract: Proposed is a novel positive-working photoresist composition of the chemical sensitization type capable of giving a finely patterned resist layer having an excellent cross sectional profile even for a discretely isolated pattern with high sensitivity and high resolution. The composition comprises, besides (a) a compound generating an acid by the irradiation with actinic rays, (b) a resinous ingredient capable of being imparted with increased solubility in an alkaline developer solution in the presence of an acid and (c) an organic solvent which is a ketone, ether or ester as the basic ingredients of the chemical sensitization type photoresist compositions, (d) an N,N-dialkyl carboxylic acid amide such as N,N-dimethyl formamide and N,N-dimethyl acetamide in a specified proportion relative to the component (b).Type: GrantFiled: May 29, 1996Date of Patent: June 23, 1998Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Sakai, Toshimasa Nakayama