Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

Abstract: The purpose of the invention is to manufacture the flexible display device having resin substrate with high throughput and high yield. The structure of the invention is as follows: a display device having plural pixels on a resin substrate comprising: a first layer made of a metal oxide film is formed on a surface of the resin substrate opposite to a surface that the plural pixels are formed, a second layer made of a transparent conductive film is formed in contact with a surface, which is opposite side to the resin substrate, of the first layer.

Abstract: The purpose of the invention is to manufacture the flexible display device having resin substrate with high yield. The structure is as follows. A manufacturing method of a display device comprising: forming a first layer of a semiconductor on a glass substrate, forming a second layer of a first metal on the first layer, forming a third layer of a first insulating material on the second layer, forming a fourth layer of a second metal or a metal oxide on the third layer, coating precursor of polyimide on the fourth layer, making a polyimide substrate by baking the precursor of polyimide to make a polyimide substrate, forming pixels on the polyimide substrate, separating the polyimide substrate and the glass substrate by making peel off between the second layer and the third layer with irradiation of a laser beam on the first layer.

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

Abstract: The organic EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and a pixel having an anode, an organic EL layer, and a cathode is formed on a region enclosed with the scanning line and the video signal line. A first detection electrode extends in the first direction above the pixel via insulation films. A counter substrate is disposed while covering the first detection electrode via an adhesive. A second detection electrode extends in the second direction at the outer side of the counter substrate.

Abstract: A method of manufacturing a display device, including: a stacking step of stacking, on a glass substrate, a sacrificial resin layer, a metal layer, a transparent metal oxide layer, a base material resin layer, and a functional layer including at least one of a pixel circuit-constituting layer driving a plurality of pixels and a color filter layer, in this order; a radiating step of radiating a pulsed light of a xenon flash lamp to the metal layer through the glass substrate and the sacrificial resin layer; and a detaching step of reducing a force of adhesion between the sacrificial resin layer and the metal layer with the pulsed light radiated in the radiating step, and detaching the sacrificial resin layer from the metal layer.

Abstract: The purpose of the present invention is to realize a flexible display includes a resin substrate and a TFT having an oxide. The structure of the invention is as follows. A display device comprising: a substrate formed by resin, an inorganic insulating film and a thin film transistor including a semiconductor, wherein an infra-red light reflecting film is formed between the substrate and the thin film transistor.

Abstract: An organic EL display device has a semiconductor circuit substrate comprising a TFT and an organic passivation layer thereon. An AlO layer is formed over the organic passivation layer, and an electrode layer is formed on the AlO layer. The electrode layer connects with TFT via a through hole formed in the AlO layer and in the organic passivation layer.

Abstract: The invention provides an organic EL display device that, even if bent, is not prone to plastic deformation and has improved moisture blocking characteristics. An organic EL display device includes: a glass substrate; an organic EL layer formed on an upper side of the glass substrate; and a support substrate glued on a lower side of the glass substrate via a first adhesive. Recessed portions or projecting portions are formed on the glass substrate at a side thereof facing the support substrate. The recessed portions or a space between each of the projecting portions is filled with the first adhesive.

Abstract: Simple and high-precision processing, and narrowing of the frame are to be facilitated at the time of preparing display panels by multiple formation. After bonding a first substrate layer in which a plurality of element substrates is formed on a support plate and a second substrate layer in which a plurality of counter substrates is formed on a support plate, these substrate layers are divided into a plurality of display panels. Ridge-like ribs of a covalently or ionically bonding inorganic material are formed along edges of the element substrate and the counter substrate. The dividing includes scribing the support plates along the ribs, and flexing and breaking the support plates.

Abstract: A structure including a first resin layer and a second resin layer sandwiching a self-light emitting element layer, a first stopper layer, a first resin sacrificial layer and a first glass substrate which are stacked on the first resin layer on the opposite side of the self-light emitting element layer, and a second glass substrate stacked on the second resin layer is prepared. The first glass substrate is peeled off from the first resin sacrificial layer by irradiating the first glass substrate with a laser beam. The first resin sacrificial layer is decomposed by a chemical reaction using a gas. The first stopper layer has a resistance to the chemical reaction, and the first resin sacrificial layer is removed while leaving the first stopper layer in a step of decomposing the first resin sacrificial layer.

Abstract: Simple and high-precision processing, and narrowing of the frame are to be facilitated at the time of preparing display panels by multiple formation. After bonding a first substrate layer in which a plurality of element substrates is formed on a support plate and a second substrate layer in which a plurality of counter substrates is formed on a support plate, these substrate layers are divided into a plurality of display panels. Ridge-like ribs of a covalently or ionically bonding inorganic material are formed along edges of the element substrate and the counter substrate. The dividing includes scribing the support plates along the ribs, and flexing and breaking the support plates.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.

Abstract: An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first barrier layer which contains AlOx is formed between the substrate and the TFT.