Abstract: The ion device includes: a first discharge electrode which generates positive ions; a second discharge electrode which generates negative ions; a transformer which outputs a high alternating-current voltage; a first diode which rectifies the high alternating-current voltage and applies a voltage thus rectified to the first discharge electrode; and a second diode which rectifies the high alternating-current voltage and applies a voltage thus rectified to the second discharge electrode. The first diode and the second diode are connected, on a high voltage circuit substrate, to an output terminal of the transformer via a conductive body such as a wiring pattern and a soldering pattern. The conductive body is formed in a region where the conductive body causes neither a decrease in strength of an electric field formed by the first discharge electrode nor a decrease in strength of an electric field formed by the second discharge electrode.

Abstract: With a method of storing meat stored in a refrigerator or a freezer after a lump of meat is prepared into small portions, which includes irradiating the meat with positive ions and negative ions before storage in the refrigerator or the freezer, a method of extending a durable life of food requiring storage by refrigeration, a method of suppressing growth of fungi developed at a surface of food requiring storage by refrigeration, and an ion irradiation apparatus which can suitably be used for these methods, a method allowing suppression of growth of fungi adhering to food (in particular, meat) requiring storage by refrigeration, a method of thereby extending a durable life of food requiring storage by refrigeration, and an apparatus which can suitably be used for these methods are provided.

Abstract: An ion generation device includes: a high voltage generation circuit; and an ion generation element. The high voltage generation circuit includes: a capacitor; a high voltage transformer; a switching element; and a pulse signal generation portion which generates a pulse signal for controlling the turning on and off of the switching element. The pulse signal generation portion adjusts a pulse width of an on-period such that the pulse width of the on-period of the pulse signal is substantially equal to a time obtained by multiplying the reciprocal of an output voltage frequency at the time of a forward operation of the high voltage transformer by one-fourth.

Abstract: An ion generating element (10) is provided with: a needle-shaped ion discharge unit (11) that generates ions in the air by means of discharge; a voltage generating unit (13) that generates voltage to be applied to the ion discharge unit (11); and a rectifier element (14) that is connected between the ion discharge unit (11) and the voltage generating unit (13), and applies either the positive or negative portion of the voltage generated by the voltage generating unit (13) to the ion discharge unit (11). The rectifier element (14) is longitudinal in shape, and is disposed at the opposite side of the tip side of the ion discharge unit (11) such that the longitudinal direction of the rectifier element (14) intersects with the axial direction of the needle-shaped ion discharge unit (11).

Abstract: An ion generation device includes: a high voltage generation circuit; and an ion generation element. The high voltage generation circuit includes: a capacitor; a high voltage transformer; a switching element; and a pulse signal generation portion which generates a pulse signal for controlling the turning on and off of the switching element. The pulse signal generation portion adjusts a pulse width of an on-period such that the pulse width of the on-period of the pulse signal is substantially equal to a time obtained by multiplying the reciprocal of an output voltage frequency at the time of a forward operation of the high voltage transformer by one-fourth.

Abstract: A microprocessor capable of executing a micro-instruction output from a micro-memory according to an address which corresponds to an instruction to be executed at a time when each time the microprocessor receives the address is provided. The microprocessor includes a unit (a T1 cycle signal generator, a T2 cycle signal generator, a TW cycle signal generator) for generating a control signal for a period of time corresponding to a period of time of a waiting signal at a time when the waiting signal is received from the outside, and a unit (a microcode read-only memory, a read-only memory address latch, a read-only memory output latch, an address control circuit, a multiplexer) connected to the control signal generating unit (the T1 cycle signal generator, the T2 cycle signal generator, the TW cycle signal generator) for holding an address supplied to the micro-memory for a period of time corresponding to a period of time of the control signal.

Abstract: A circuit for generating a pulse-like timing signal driving a stepping motor which is used to drive for example a magnetic tape to run in an audio tape or video tape recording and reproducing apparatus. A rewritable memory stores output pattern data and time information for generating the timing signal. This timing signal generating circuit comprises a rewrite control circuit responsive to an operation mode instructing signal, for performing a predetermined operational processing on basic pattern data and basic time information and storing the resulting output pattern data and uniquely related time information in the rewritable memory.

Abstract: An amplifier circuit having a differential amplifier, provided in a semiconductor integrated circuit is disclosed. The differential amplifier has one input connected to a reference voltage generating circuit. The voltage outputted from the reference voltage generating circuit includes a voltage fluctuation depending on the fluctuation in power-supply voltage Vcc. However, a fluctuation absorbing circuit comprising resistors 51 and 52, diodes 53 and 54, and a capacitor 55 absorbs the voltage fluctuation thereof. As a result, the change in offset voltage of the differential amplifier is prevented, resulting in an improvement of a power-supply rejection ratio.