Patents by Inventor Kazuhei Yoshinaga

Kazuhei Yoshinaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor manufacturing apparatus and method for cleaning same
    Patent number: 9566620
    Abstract: An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: February 14, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro Toratani, Fumiki Aiso, Takashi Nakao, Kazuhei Yoshinaga
  • SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CLEANING SAME
    Publication number: 20130319473
    Abstract: An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.
    Type: Application
    Filed: August 6, 2013
    Publication date: December 5, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro Toratani, Fumiki Aiso, Takashi Nakao, Kazuhei Yoshinaga
  • Method for manufacturing semiconductor device and the semiconductor device
    Patent number: 8187973
    Abstract: A method for manufacturing a semiconductor device which includes: alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate, wherein the silicon source is supplied under a supply condition where an adsorption amount of molecules of the silicon source on the semiconductor substrate is increased without causing an adsorption saturation of the molecules of the silicon source on the semiconductor substrate, and wherein the oxidant is supplied under a supply condition where impurities remain in the molecules of the silicon source adsorbed on the semiconductor substrate.
    Type: Grant
    Filed: March 16, 2009
    Date of Patent: May 29, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuyuki Sekine, Kazuhei Yoshinaga
  • SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CLEANING SAME
    Publication number: 20100078045
    Abstract: An LPCVD apparatus is provided with a processing chamber and a reaction cooling apparatus. The reaction cooling apparatus is placed outside the processing chamber and is configured to generate hydrogen fluoride gas by reaction of hydrogen gas and fluorine gas and to cool the hydrogen fluoride gas. The hydrogen fluoride gas cooled by the reaction cooling apparatus is supplied into the processing chamber as a cleaning gas.
    Type: Application
    Filed: September 10, 2009
    Publication date: April 1, 2010
    Inventors: Kenichiro TORATANI, Fumiki Aiso, Takashi Nakao, Kazuhei Yoshinaga
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
    Publication number: 20090256188
    Abstract: A method for manufacturing a semiconductor device which includes: alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate, wherein the silicon source is supplied under a supply condition where an adsorption amount of molecules of the silicon source on the semiconductor substrate is increased without causing an adsorption saturation of the molecules of the silicon source on the semiconductor substrate, and wherein the oxidant is supplied under a supply condition where impurities remain in the molecules of the silicon source adsorbed on the semiconductor substrate.
    Type: Application
    Filed: March 16, 2009
    Publication date: October 15, 2009
    Inventors: Katsuyuki SEKINE, Kazuhei YOSHINAGA