Abstract: A semiconductor device includes: a semiconductor substrate; a first insulation film that is formed on the semiconductor substrate and includes grooves (including through holes); a metal film that is formed inside the grooves and includes a first metal (e.g., titanium (Ti)); a glue film formed on a side surface of the metal film; and a metal plating film that is formed on a side surface of the glue film, comprises a second metal (e.g., copper (Cu)), and includes a region having the first metal (e.g., Ti) in a surface that contacts the glue film. Thus, there are provided a semiconductor device and a semiconductor device fabrication method that have excellent adhesiveness and are capable of ensuring high reliability.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract: A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.

Abstract: A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

Abstract: In a wiring structure of a semiconductor device, dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material. The wiring structure of the semiconductor device includes a first insulating film having plural grooves, plural wiring films formed protrusively above tops of the first insulating film among the grooves, plural barrier films formed on bottoms of the wiring films and up to a position on sides of the wiring films higher than the tops of the first insulating film; first cap films comprising metal films formed on tops of the wiring films, and a second cap film formed on at least respective sides of the first cap films and the barrier films.

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract: A method of producing a semiconductor device includes, in order to electrically connect a lower layer wiring and an upper layer wiring opposite to each other with an interlayer insulation film intervening between them, a step of forming a via-hole, which exposes the lower layer wiring upward from the lower layer wiring through the interlayer insulation film, a step of forming a protective film for preventing erosion, and a step of forming a plug for electrically connecting the lower layer wiring to the upper layer wiring, wherein the protective film is formed by a CVD process in order to cover a residue having stuck to the inner wall of the hole concerned during forming the via-hole.

Abstract: A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.

Abstract: Cu is nitrided to form a nitride of Cu 5 on a Cu wiring layer 1. A diffusion base material layer 6 used as a diffusion source and a barrier metal layer 7, which are interdiffused with Cu, are formed on the nitride of Cu 5. With heat treatment, the Cu wiring layer 1 and the diffusion base material layer 6 are interdiffused to form an alloy layer of Cu 8 between the Cu wiring layer 1 and the barrier metal layer 7.

Abstract: A tunable filter has a plurality of variable capacitors and a plurality of inductor elements, each being formed on a common substrate, a filter circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a monitor circuit formed by using at least a portion of the plurality of variable capacitors and a portion of the plurality of inductor elements, a detecting circuit which detects a prescribed circuit constant of the monitor circuit, a storage which stores information relating to a reference circuit constant of the monitor circuit, and a capacitance control circuit which controls capacitance of the variable capacitors in the monitor circuit and capacitance of the variable capacitors in the filter circuit, based on a result detected by the detecting circuit and information stored in the storage.

Abstract: A ferroelectric memory device has a lower insulating film (first insulating film) formed on a semiconductor substrate. A ferroelectric capacitor structure is formed on the lower insulating film. The ferroelectric capacitor structure is created by layering in order a lower electrode, ferroelectric layer and upper electrode. The ferroelectric memory device also has an upper insulating film (fifth insulating film) which covers the ferroelectric capacitor structure. A wiring layer is formed over the upper insulating film. An aluminum oxide film of thickness 5 to 50 nm is formed so as to cover the wiring layer and upper insulating film.

Abstract: A semiconductor device includes a semiconductor substrate, a first electrode that is formed over said semiconductor substrate, a capacitive insulating film that is formed on the first electrode and is made of a metal oxide ferroelectric, a second electrode that is formed on the capacitive insulating film, an insulating film that has a first opening exposing a portion of an upper side of the second electrode and is formed so that it covers the first electrode, the capacitive insulating film, and the second electrode, a first barrier film having an amorphous structure which is formed inside the first opening and on the insulating film, and a wiring film that is formed over the first barrier film.

Abstract: A digital demodulator includes a resonator having a resonance frequency same as a carrier frequency to store a charge corresponding to a digital signal modulated by phase shift keying, a capacitor to store the charge of the resonator, an amplifier including an input node and an output node between which the capacitor is connected to convert a stored charge of the capacitor into a voltage signal, and a controller configured to accumulate in the resonator the charge induced by the frequency signal modulated by phase shift keying in a first control mode and configured to transfer the charge of the resonator to the capacitor in a second control mode, to output the voltage signal corresponding to the stored charge of the capacitor from the output node of the amplifier.

Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Abstract: In a MEMS type variable capacity having a piezoelectric driving mechanism, a movable head having movable electrodes are arranged thereon, stationary electrodes is positioned to face the movable electrodes, and a piezoelectric driving beam structure is joined to the movable head and have one end fixed to the substrate. The movable electrode and the stationary electrode form a variable capacity. In the variable capacity, the distance and capacitance between the movable electrode and the stationary electrode of the variable capacity can be maintained constant so as to realize a reproducibility and a reliable controllability.

Abstract: A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

Abstract: The present invention provides a semiconductor device, having: a semiconductor substrate; a first electrode formed over the semiconductor substrate; a first insulation film covering the first electrode and having an aperture for exposing a part of the first electrode; a first conductive film formed on a part of the first insulation film and the first electrode inside the aperture; an isolation region placed inside the aperture; and a second conductive film formed on the first conductive film and the isolation region.

Abstract: In a wiring structure of a semiconductor device, dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material. The wiring structure of the semiconductor device includes a first insulating film having plural grooves, plural wiring films formed protrusively above tops of the first insulating film among the grooves, plural barrier films formed on bottoms of the wiring films and up to a higher position than the tops on sides of the wiring films, first cap films comprising metal films formed on tops of the wiring films, and a second cap film formed on at least respective sides of the first cap films and the barrier films.