Patents by Inventor Kazuhide Hasebe

Kazuhide Hasebe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190115204
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: December 11, 2018
    Publication date: April 18, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Publication number: 20190096658
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: November 28, 2018
    Publication date: March 28, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Publication number: 20190041756
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: October 11, 2018
    Publication date: February 7, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Patent number: 10191378
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: January 29, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Shigeru Nakajima, Jun Ogawa, Hiroki Murakami
  • Patent number: 10176992
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: January 8, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Shigeru Nakajima, Jun Ogawa, Hiroki Murakami
  • Patent number: 10141187
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: November 27, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Shigeru Nakajima, Jun Ogawa, Hiroki Murakami
  • Patent number: 9970110
    Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: May 15, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Jun Ogawa, Akira Shimizu
  • Patent number: 9920422
    Abstract: Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: March 20, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akinobu Kakimoto, Kazuhide Hasebe
  • Publication number: 20180019113
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: September 25, 2017
    Publication date: January 18, 2018
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Patent number: 9865457
    Abstract: There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: January 9, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Akira Shimizu
  • Patent number: 9758865
    Abstract: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: September 12, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Kazuya Takahashi, Katsuhiko Komori, Yoshikazu Furusawa, Mitsuhiro Okada, Hiroyuki Hayashi, Akinobu Kakimoto
  • Publication number: 20170253989
    Abstract: A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.
    Type: Application
    Filed: March 6, 2017
    Publication date: September 7, 2017
    Inventors: Yoichiro CHIBA, Daisuke SUZUKI, Kazuhide HASEBE
  • Publication number: 20170167019
    Abstract: A plasma processing apparatus includes a process chamber, and a susceptor provided in the process chamber and having a substrate receiving area formed in a top surface thereof. A first plasma generator is configured to perform a first plasma process on a first predetermined area in the substrate receiving area. A first radio frequency power source is connected to the first plasma generator and configured to supply first radio frequency power to the first plasma generator. A second plasma generator is configured to perform a second plasma process on a second predetermined area in the substrate receiving area and to be able to change the second predetermined area. A second radio frequency power source is connected to the second plasma generator and configured to supply second radio frequency power to the second plasma generator.
    Type: Application
    Filed: November 30, 2016
    Publication date: June 15, 2017
    Inventors: Kazuhide HASEBE, Shigehiro MIURA
  • Publication number: 20170162381
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: February 23, 2017
    Publication date: June 8, 2017
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Publication number: 20170125238
    Abstract: There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.
    Type: Application
    Filed: November 2, 2016
    Publication date: May 4, 2017
    Inventors: Kazuhide HASEBE, Akira SHIMIZU
  • Patent number: 9613838
    Abstract: A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 4, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Mitsuhiro Okada, Kazuhide Hasebe
  • Publication number: 20170009345
    Abstract: A film-forming processing apparatus includes a first heater heating an entire heat treatment region of a substrate, a second heater heating the substrate to have an in-plane temperature distribution having a concentric shape, a gas supplier supplying a process gas to a rotary table; and a control part outputting a control signal for executing a first step of setting a rotation position of the rotary table such that the substrate on the rotary table is placed in a position corresponding to the second heater and forming the in-plane temperature distribution having the concentric shape on the substrate by heating the substrate by the second heater, and a second step of performing a film forming process on the substrate by rotating the rotary table in a state where a heating energy received by the substrate from the second heater is smaller than that in the first step.
    Type: Application
    Filed: July 1, 2016
    Publication date: January 12, 2017
    Inventors: Hitoshi KATO, Kazuhide HASEBE
  • Patent number: 9353442
    Abstract: Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: May 31, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Mitsuhiro Okada, Akinobu Kakimoto, Kazuhide Hasebe
  • Publication number: 20160148801
    Abstract: A substrate processing apparatus, that performs oxidization on a surface of a substrate in a vacuum atmosphere formed in a vacuum chamber, includes an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing ozone and hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition. The substrate processing apparatus further includes an energy supply part configured to supply an energy to the processing atmosphere to oxidize a surface of a substrate with reactive species generated by forcibly decomposing the ozone and hydroxyl radical generated by reaction of the hydrogen donor.
    Type: Application
    Filed: November 13, 2015
    Publication date: May 26, 2016
    Inventors: Kazuo YABE, Akira SHIMIZU, Kazuhide HASEBE
  • Patent number: 9343292
    Abstract: Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: May 17, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuhide Hasebe, Tomoyuki Obu, Masaki Kurokawa