Abstract: In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

Abstract: After semiconductor wafers are loaded into a reaction vessel, and ruthenium (Ru) film or ruthenium oxide film is formed, the interior of the reaction vessel is efficiently cleaned without contaminating the wafers. The interior of the reaction vessel is heated to a temperature of above 850° C. while the pressure inside the reaction vessel is reduced to, e.g., 133 pa (1 Torr)-13.3 Kpa (100 Torr), and oxygen gas is fed into the reaction vessel at a flow rate of, e.g., above 1.5 Lm, whereby the ruthenium film or the ruthenium oxide film formed inside the reaction vessel is cleaned off. In place of oxygen gas, active oxygen, such as O3, O* and OH*, etc. may be used.

Abstract: An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfaces of the workpieces in a processing vessel. Both the intrafilm thickness uniformity and the characteristics of the oxide film can be improved, maintaining oxidation rate on a relatively high level.

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

Abstract: An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfaces of the workpieces in a processing vessel. Both the intrafilm thickness uniformity and the characteristics of the oxide film can be improved, maintaining oxidation rate on a relatively high level.

Abstract: An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfaces of the workpieces in a processing vessel. Both the intrafilm thickness uniformity and the characteristics of the oxide film can be improved, maintaining oxidation rate on a relatively high level.

Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers, or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.

Abstract: The present invention is directed to a method of etching a compound metal oxide film containing plural kinds of metallic element, such as Ba, Sr, Ti or the like. A first cleaning step employing Cl2 gas is carried out in order to remove alkaline earth metal (Ba, Sr) from the film, then a second cleaning step employing ClF3 gas is carried out in order to remove a metal (Ti) other than the alkaline earth metal from the film. The etching method is applicable not only to the etching process in the semiconductor manufacturing but also to the cleaning process for cleaning the processing vessel for film deposition.

Abstract: Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the process container and is caused to react with the moisture on the wafer at a process temperature of 200° C., thereby forming an interface layer of tantalum oxide. Then, PET gas and oxygen gas are supplied into the process container at the same time, and are caused to react with each other at a process temperature of 410° C., thereby forming a main layer of tantalum oxide on the interface layer.

Abstract: Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the process container and is caused to react with the moisture on the wafer at a process temperature of 200° C., thereby forming an interface layer of tantalum oxide. Then, PET gas and oxygen gas are supplied into the process container at the same time, and are caused to react with each other at a process temperature of 410° C., thereby forming a main layer of tantalum oxide on the interface layer.

Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers. or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.

Abstract: A sample is placed on a sample receiving stage for receiving the sample. The sample is transferred one at a time to a measuring table, and a thickness of a thin film formed on a surface of the sample is measured by irradiating the surface of the sample with a measuring light beam. A covering structure is disposed between the sample receiving stage and the measuring table to define a sample transfer space and a measuring space in which the measuring table is disposed. A high-purity purging gas containing only a very small amount of contaminants is supplied through purging gas supply devices into the transfer space and the measuring space covered with the covering structure.

Abstract: A number of wafers are loaded into a reaction vessel on a wafer boat; monosilane gas, phosphine gas and N.sub.2 O gas are supplied to form amorphous silicon film doped with, e.g., phosphorus; and then the wafers are annealed in, e.g., a different reaction tube to polycrystallize the amorphous silicon film. Os (Oxygen) generated by decomposition of N.sub.2 O are taken into the film. The Os become nuclei of the silicon crystals, and the crystals become fine and have size uniformity. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained. Resistance values of the polysilicon film can be easily controlled by addition of oxygen. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained.

Abstract: A number of semiconductor wafers are retained in a wafer boat such that the wafers are disposed at intervals in the vertical direction. The wafer boat is loaded into a process tube of a vertical type thermal processing apparatus. The inside of the process tube is heated to 300.degree. to 530.degree. C. in a depressurized atmosphere, and a process gas including a disilane gas is fed into the process tube such that the disilane gas flows at a flow rate of 300 SCCM or more, thereby to form silicon films.

Abstract: The present invention relates to a heat treatment apparatus wherein treatment objects such as semiconductor wafers contained in a treatment boat are loaded in a treatment container such as a process tube. Water vapor is supplied from the top of the treatment container toward the bottom for heat treatment of the treatment objects to permit water vapor passage between the treatment container top and the top face of the heat treatment boat. A gas diffusion plate possessing for example 16 flow holes is provided, moreover, a heat treatment space is formed at the bottom direction of the gas diffusion plate. These flow holes are arranged at equal intervals in the circumference direction of a space between the outer circumference of the treatment objects held by the heat treatment boat and the inner side of the treatment container.