Abstract: According to one embodiment, the first electrode layer includes a first portion and a second portion thicker than the first portion. The second electrode layer includes a third portion and a fourth portion thicker than the third portion. The fourth portion is provided on a lower level side of the second portion. The fourth portion has a level difference in a staircase configuration between the fourth portion and the second portion. The fourth portion protrudes along a first direction further than an edge of the second portion. The third electrode layer is provided between the first electrode layer and the third portion. The third electrode layer has an edge receding further than the edge of the second portion of the first electrode layer. The receding is in a reverse direction of a protruding direction of the fourth portion of the second electrode layer.

Abstract: According to one embodiment, a semiconductor device includes: a stack body including an insulator, a first conductor and a second conductor stacked stepwise by interposing the insulator and electrically disconnected from each other; and a first contact plug which reaches the first conductor from a region above the stack body. The first conductor includes a first portion positioned below the insulator, a second portion positioned above the insulator, and a third portion that electrically connects the first portion of the first conductor and the second portion of the first conductor. The third portion of the first conductor is provided in an opening formed on the insulator.

Abstract: According to one embodiment, the first electrode layer includes a first portion and a second portion thicker than the first portion. The second electrode layer includes a third portion and a fourth portion thicker than the third portion. The fourth portion is provided on a lower level side of the second portion. The fourth portion has a level difference in a staircase configuration between the fourth portion and the second portion. The fourth portion protrudes along a first direction further than an edge of the second portion. The third electrode layer is provided between the first electrode layer and the third portion. The third electrode layer has an edge receding further than the edge of the second portion of the first electrode layer. The receding is in a reverse direction of a protruding direction of the fourth portion of the second electrode layer.

Abstract: According to one embodiment, a semiconductor device includes: a stack body including an insulator, a first conductor and a second conductor stacked stepwise by interposing the insulator and electrically disconnected from each other; and a first contact plug which reaches the first conductor from a region above the stack body. The first conductor includes a first portion positioned below the insulator, a second portion positioned above the insulator, and a third portion that electrically connects the first portion of the first conductor and the second portion of the first conductor. The third portion of the first conductor is provided in an opening formed on the insulator.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method includes forming a first stopper film forming a lower gate layer, making a recess in the lower gate layer, filling a sacrificial film into the recess, forming a second stopper film, making an opening in the second stopper film, forming a stacked body. The stacked body includes electrode films and insulating films. The method includes, making a slit in the stacked body, making a hole in the stacked body, removing the sacrificial film via the hole, forming a memory film including a charge storage film. The method includes forming a channel body on a side wall of the memory film. An etching rate of the first stopper film and the second stopper film is lower than an etching rate of the electrode films and the insulating films.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method includes forming a first stopper film forming a lower gate layer, making a recess in the lower gate layer, filling a sacrificial film into the recess, forming a second stopper film, making an opening in the second stopper film, forming a stacked body. The stacked body includes electrode films and insulating films. The method includes, making a slit in the stacked body, making a hole in the stacked body, removing the sacrificial film via the hole, forming a memory film including a charge storage film. The method includes forming a channel body on a side wall of the memory film. An etching rate of the first stopper film and the second stopper film is lower than an etching rate of the electrode films and the insulating films.