Abstract: This invention relates to a stainless steel gasket having markedly improved strength and fatigue properties due to precipitation strengthening. Its composition comprises C: at most 0.03%, Si: at most 1.0%, Mn: at most 2%, Cr: 16.0%-18.0%, Ni: 6.0%-8.0%, N: at most 0.25%, if necessary Nb: at most 0.30%, and a remainder of Fe and unavoidable impurities. After cold rolling, final annealing is carried out, and after a structure is formed of recrystallized grains with an average grain diameter of at most 5 ?m having an area ratio of 50-100% and an unrecrystallized portion having an area ratio of 0-50%, a metal gasket is formed by steps including temper rolling with a reduction of at least 30% to make the area ratio of a strain induced martensite phase at least 40%, and forming and heat treatment at 200-350° C.

Abstract: A semiconductor device includes a mount substrate, a high-frequency transmission line provided on a top surface of the mount substrate, and a semiconductor chip mounted on the top surface of the mount substrate in a facedown state in electrical contact with the high-frequency transmission line, wherein there is formed a depression on the top surface of the mount substrate.

Abstract: A semiconductor device includes a mount substrate, a high-frequency transmission line provided on a top surface of the mount substrate, and a semiconductor chip mounted on the top surface of the mount substrate in a facedown state in electrical contact with the high-frequency transmission line, wherein there is formed a depression on the top surface of the mount substrate.

Abstract: This invention relates to a stainless steel gasket having markedly improved strength and fatigue properties due to precipitation strengthening. Its composition comprises C: at most 0.03%, Si: at most 1.0%, Mn: at most 2%, Cr: 16.0%-18.0%, Ni: 6.0%-8.0%, N: at most 0.25%, if necessary Nb: at most 0.30%, and a remainder of Fe and unavoidable impurities. After cold rolling, final annealing is carried out, and after a structure is formed of recrystallized grains with an average grain diameter of at most 5 &mgr;m having an area ratio of 50-100% and an unrecrystallized portion having an area ratio of 0-50%, a metal gasket is formed by steps including temper rolling with a reduction of at least 30% to make the area ratio of a strain induced martensite phase at least 40%, and forming and heat treatment at 200-350° C.

Abstract: A semiconductor device includes a mount substrate, a high-frequency transmission line provided on a top surface of the mount substrate, and a semiconductor chip mounted on the top surface of the mount substrate in a facedown state in electrical contact with the high-frequency transmission line, wherein there is formed a depression on the top surface of the mount substrate.

Abstract: A stainless steel plate for a shadow mask, comprising 9 to 20 weight % of chromium (Cr), 0.15 weight % or less of carbon (C), 0 to 1.0 weight % of manganese (Mn), 0 to 0.2 weight % of titanium (Ti), 0 to 1.0 weight % of silica (Si), and 0 to 1.0 weight % of aluminum (Al); wherein the rest includes ferrite (Fe) and inevitable impurities, and in the inevitable impurities, the content of phosphor (P) is 0.05 weight % or less and the content of sulfur (S) is 0.03 weight % or less. Furthermore, the metal plate for a shadow mask after cold rolling or shape correction is performed is subjected to annealing treatment at the end-point temperature of the plate of 550 to 650° C. This steel plate has a coefficient of thermal expansion smaller than that of low carbon steel and is less expansive than invar alloy. Further, the steel plate has high strength that is acceptable for the shadow mask that is used under conditions where plastic deformation is small at high temperature and high tension is applied.

Abstract: An austenitic stainless steel for use in engine gaskets having a high fatigue strength and resistance to settlement and method of manufacture thereof. The austenitic stainless steel is prepared by cold rolling at least 40%, annealing at a temperature of 700° C. to 900° C. followed by temper rolling with a reduction of at least 40%. The metal structure obtained by annealing is a recovered unrecrystallized structure or a mixed structure of a recovered unrecrystallized structure and a recrystallized structure. The austenitic stainless steel includes at most 0.03% C, at most 1.0% Si, at most 2.0% Mn, 16.0% to 18.0% Cr, 6.0% to 8.0% Ni and up to 0.20% N.

Abstract: Engine gaskets for automobiles are fabricated from an as-quenched stainless steel having a martensitic-ferritic duplex-phase phase structure in which martensite comprises from 40% to 80%. The steel has a composition comprising on a weight basis; C+N: 0.1%-0.3%, Si: not greater than 0.5%, Mn: not greater than 0.7%, Cr: 10%-17%, and Ni: 0-0.6% and a Vickers hardness of from 300 to 500, The steel can be produced by quenching the steel after heating at 850-1000° C.

Abstract: A high-frequency switch includes a substrate, external conductors provided on the substrate, and a central conductor provided on the substrate, the external conductors and the central conductor constituting a coplanar high-frequency wave line on the substrate. A deflectable air-bridge is held on the external conductors via an air gap and extends out over the central conductor, the air-bridge being deflectable by an electrostatic field created by an actuation voltage applied between the wave line and the air-bridge. A control-signal conductor generates the actuation voltage between the wave line and the air-bridge. The central conductor acts as the control-signal conductor which generates the actuation voltage between the wave line and the air-bridge. The air-bridge contains a plurality of laminated thin films, the laminated thin films having variable internal stresses that are adjustable to match a particular actuation voltage selected for the switch.

Abstract: A total contact type image sensor includes a transparent substrate, an opaque layer formed on the transparent substrate and having document illuminating windows, a photosensitive layer formed on the transparent substrate and the opaque layer, a plurality of photoelectric conversion elements arranged on the transparent substrate with a predetermined pitch, and a transparent protection layer which covers a surface of a stacked structure which is made up of the transparent substrate, the opaque layer, a photosensitive layer and the photoelectric conversion elements. The photoelectric conversion elements respectively have at least one concave portion in a plan view of the total contact type image sensor.